Abstract: A light-emitting diode (“LED”) package and a backlight unit having the same are disclosed. The LED package includes a package substrate, at least two LED chips arranged on the package substrate spaced apart from each other and having different brightness characteristics, a plurality of electrodes mounted on the package substrate to supply electrical power to the LED chips, and electric wires connecting the electrodes to the LED chips.

Abstract: The disclosure concerns an injectable composition of paclitaxel, more particularly, an injectable composition of paclitaxel having excellent anticancer effect comprising solubilizer such as polyoxyl hydrogenated castor oil, anhydrous ethanol and stabilizer such as N-acetyl amino acid. The injectable compositions of paclitaxel provide a medical effect higher than that of the known compositions showing not only a lower toxicity but also superior solubility of paclitaxel and stability at room temperature, thus enabling venous injection by having fine particles.

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

Abstract: A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Abstract: The disclosure concerns an injectable composition of paclitaxel, more particularly, an injectable composition of paclitaxel having excellent anticancer effect comprising solubilizer such as polyoxyl hydrogenated castor oil, anhydrous ethanol and stabilizer such as N-acetyl amino acid. The injectable compositions of paclitaxel provide a medical effect higher than that of the known compositions showing not only a lower toxicity but also superior solubility of paclitaxel and stability at room temperature, thus enabling venous injection by having fine particles.

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract: A 3 group-5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Abstract: A semiconductor memory device having a plurality of memory cell blocks employs a block activation control unit for controlling an activation timing of the plurality of memory cell blocks. Therefore, when a previously inputted block activation signal is identical to a currently inputted block activation signal, the currently inputted block activation signal is delayed for a predetermined time, so that the memory cell block can be activated after a precharge operation. When the previously inputted block activation signal is different from the currently inputted block activation signal, the memory cell block corresponding to the currently inputted block activation signal is activated, and the memory cell block corresponding to the previously inputted block activation signal performs the precharge operation at the same time. As a result, unnecessary delay time is reduced in memory block activation, thereby improving operation speed.

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds ˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract: A semiconductor memory device having a plurality of memory cell blocks employs a block activation control unit for controlling an activation timing of the plurality of memory cell blocks. Therefore, when a previously inputted block activation signal is identical to a currently inputted block activation signal, the currently inputted block activation signal is delayed for a predetermined time, so that the memory cell block can be activated after a precharge operation. When the previously inputted block activation signal is different from the currently inputted block activation signal, the memory cell block corresponding to the currently inputted block activation signal is activated, and the memory cell block corresponding to the previously inputted block activation signal performs the precharge operation at the same time. As a result, unnecessary delay time is reduced in memory block activation, thereby improving operation speed.

Abstract: A semiconductor memory device has a plurality of memory blocks. The semiconductor memory device pre-charges a memory block when a block address signal applied to the memory block is identical with a previous block address signal previously applied, and activates the memory block when the block address signal is not identical with the previous block address signal. As a result, a pre-charge operation of a previous block and an activation operation of a present block are simultaneously performed so that the operation speed of an entire system becomes high-speed.