Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.

Abstract: A plasticizer composition including a citrate-based material and an epoxidized oil, and the plasticizer composition capable of maintaining an excellent plasticization efficiency and providing an improved mechanical properties and stress resistance when compared with conventional phthalate-based plasticizer products.

Abstract: Disclosed is an endoscope apparatus. The endoscope apparatus of the present invention includes: an endoscope including a flexible insertion section to be inserted into a human body; a flexible channel attached to the insertion section so that a part forms a passage in a longitudinal direction of the insertion section; and an assistant arm movably inserted into the passage and manipulated by a control device, and the assistant arm includes forceps capable of gripping a human body tissue, and a bending section bent by the control device to pull the human body tissue griped by the forceps.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: Provided is an embodiment of a motor comprising: a shaft; a rotor coupled to the shaft; a stator disposed so as to face the motor; a housing for accommodating the stator; and a bus bar electrically connected to the stator, wherein the housing comprises a first stepped part on which at least a part of the bus bar is disposed.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

Abstract: An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.