Abstract: A test system includes a test device configured to output a command address and a test dock for performing a test mode and to receive a comparison signal, and a memory device configured to enter the test mode, based on the command address, to set an initial value by the command address, to perform a calculation operation on the initial value according to a logic level combination of the command address to generate a row address and a command address during a pre-charge operation, and to compress and compare internal data output based on the row address and the column address to output the internal data as the comparison signal to the test device.

Abstract: Disclosed are a composite fiber (MXene composite fiber) and a manufacturing method thereof. The composite fibers are manufactured by braiding a MXene-PAN fiber heat-treated with a polymer fiber. The method includes preparing a first dispersion including an MXene compound and a first solvent, preparing a second dispersion including polyacrylonitrile (PAN) and a second solvent, obtaining an admixture including the first dispersion and the second dispersion, obtaining a spun fiber by performing wet-spinning of the admixture, obtaining an MXene-PAN fiber by performing heat treatment of the spun fiber, and obtaining the MXene composite fiber by braiding the MXene-PAN fibers with a polymer fiber. An electrical conductivity of the MXene-PAN fiber is about 0.1 Scm?1 to 1,000 Scm?1.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: Provided is a lithography apparatus including a wafer stage, a cable connected to the wafer stage, the cable being configured to bend based on the wafer stage moving, a support unit configured to prevent the cable from sagging, the support unit including a plurality of clamps configured to restrict movement of the cable and a connection member connecting the plurality of clamps to each other, and a protective unit under the cable, the protective unit being configured to collide with the support unit based on the wafer stage moving, wherein the protective unit includes ultra-high molecular weight polyethylene (UHMWPE).

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An image sensor includes a substrate including a first region and a second region disposed in a periphery of the first region. The first region includes a plurality of unit pixels and a color filter structure, and the second region includes a dummy structure including a second color filter and a plurality of dummy lenses on the second color filter. The color filter structure includes a first extension portion extending in a first direction and a second extension portion extending in a second direction, and the dummy structure includes a third extension portion extending in the first direction and a fourth extension portion extending in the second direction. A first micro-lens, a second micro-lens, and a third micro-lens are in a first corner portion, and a first dummy lens, a second dummy lens, and a third dummy lens are in the second corner portion.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: Provided is an embodiment of a motor comprising: a shaft; a rotor coupled to the shaft; a stator disposed so as to face the motor; a housing for accommodating the stator; and a bus bar electrically connected to the stator, wherein the housing comprises a first stepped part on which at least a part of the bus bar is disposed.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

Abstract: An organic fight-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer.