Abstract: A plasma processing system is provided. The plasma processing system includes an edge ring assembly that includes a dielectric ring and a coil. The coil is embedded within the dielectric ring. The coil generates a magnetic field that affects the ions in the proximity of the plasma sheath and in turn increases the fabrication yield of the semiconductor process.

Abstract: A plasma processing system is disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly surrounding the ESC. The edge ring assembly includes a coupling ring and temperature modifying elements disposed within the coupling ring.

Abstract: A lifting device includes a base body. The base body includes a supporting surface and defines a cavity. The cavity extends through the supporting surface. The lifting device further includes a magnetic bar, a spring, and a coil in the cavity. The spring includes a first end fixed to an end of the magnetic bar away from the supporting surface and a second end fixed on a wall of the cavity. The coil surrounds the magnetic bar. When the coil is applied with a voltage to generate an electromagnetic induction, the magnetic bar is driven to move out of the cavity from the supporting surface or move to compress the spring.

Abstract: The present disclosure provides an electrostatic chuck for holding a wafer. The electrostatic chuck includes at least one dielectric layer, an electrode layer coupled to the dielectric layer, and a chuck base. The chuck base includes a plurality of lock holes. The dielectric layer and the electrode layer are disposed on the chuck base. Each of the lock holes of the chuck base includes a first portion and a second portion connected to the first portion. The first portion has a first opening on a bottom surface of the chuck base. The second portion has a second opening on the bottom surface of the chuck base. A width of the second opening of the second portion is smaller than a width of the first opening of the first portion.

Abstract: A lifting device includes a base body. The the base body includes a supporting surface and defines a cavity. The cavity extends through the supporting surface. The lifting device further includes a magnetic bar, a spring, and a coil in the cavity. The spring includes a first end fixed to an end of the magnetic bar away from the supporting surface and a second end fixed on a wall of the cavity. The coil surrounds the magnetic bar. When the coil is applied with a voltage to generate an electromagnetic induction, the magnetic bar is driven to move out of the cavity from the supporting surface or move to compress the spring.

Abstract: A plasma processing system is provided. The plasma processing system includes an edge ring assembly that includes a dielectric ring and a coil. The coil is embedded within the dielectric ring. The coil generates a magnetic field that affects the ions in the proximity of the plasma sheath and in turn increases the fabrication yield of the semiconductor process.

Abstract: The present disclosure provides an electrostatic chuck for holding a wafer. The electrostatic chuck includes at least one dielectric layer, an electrode layer coupled to the dielectric layer, and a chuck base. The chuck base includes a plurality of lock holes. The dielectric layer and the electrode layer are disposed on the chuck base. Each of the lock holes of the chuck base includes a first portion and a second portion connected to the first portion. The first portion has a first opening on a bottom surface of the chuck base. The second portion has a second opening on the bottom surface of the chuck base. A width of the second opening of the second portion is smaller than a width of the first opening of the first portion.

Abstract: A plasma processing system is disclosed. The plasma processing system includes an electrostatic chuck (ESC) and an edge ring assembly surrounding the ESC. The edge ring assembly includes a coupling ring and temperature modifying elements disposed within the coupling ring.