Abstract: The present invention provides a motion control structure and a actuator. The motion control structure includes a motion platform, a first actuator having a first execution unit arranged on opposite sides of the motion platform along an X-axis direction and a second execution unit arranged on opposite sides of the motion platform along a Y-axis direction. The first execution unit includes a first actuating element displaced along the X-axis direction. The second execution unit includes a second actuating element displaced along the Y-axis direction. A second actuator surrounds an inner periphery of the motion platform and includes a third execution unit having an assembly portion displaced along the Z-axis direction. The motion control structure of the invention has the advantages that the motion platform can be driven to realize motion in six degrees of freedom.

Abstract: Provided is a microphone, including a base having a back cavity, a diaphragm, a backplate electrode, and a backplate spaced from the diaphragm and defining an inner cavity jointly with the diaphragm. The diaphragm includes a vibration portion, a fixing portion, and a leak hole. The back cavity is communicated with the inner cavity through the leak hole. The backplate is provided with a first through hole. The inner cavity is communicated with outside through the first through hole. The backplate includes a backplate body and a backplate extension portion. The inner cavity includes a first inner cavity and a second inner cavity. The backplate extension portion is provided with a second through hole, and the second inner cavity is communicated with outside through the second through hole. A method for manufacturing the microphone is further provided. The technical solution has better drop performance.

Abstract: Provided is a microphone, including a base having a back cavity, a diaphragm, a backplate electrode, and a backplate spaced from the diaphragm and defining an inner cavity jointly with the diaphragm. The diaphragm includes a vibration portion, a fixing portion, and a leak hole. The back cavity is communicated with the inner cavity through the leak hole. The backplate is provided with a first through hole. The inner cavity is communicated with outside through the first through hole. The backplate includes a backplate body and a backplate extension portion. The inner cavity includes a first inner cavity and a second inner cavity. The backplate extension portion is provided with a second through hole, and the second inner cavity is communicated with outside through the second through hole. A method for manufacturing the microphone is further provided. The technical solution has better drop performance.

Abstract: Provided is a sealed cavity structure, including a base; an upper cover fixed to the base in a covering manner and defining a cavity jointly with the base; a leak hole that passes through the upper cover and communicates the cavity with outside; a sealing cover plate attached and fixed to an outer surface of the upper cover and completely covering the leak hole to seal the leak hole; and a sealing cap including a cap wall pressed on a side of the sealing cover plate away from the leak hole and a cap sidewall extending from the cap wall toward a direction close to the upper cover and fixed, in an abutting manner, to the upper cover. A method for manufacturing a sealed cavity structure is further provided. In this technical solution, better sealing reliability can be achieved.

Abstract: The present invention relates to the field of semiconductor technology and provides a method for forming an MEMS cavity structure, which can improve process yield for MEMS integration and encapsulation for functional stability and reliability of the MEMS structure. The method includes steps of: forming an adhesion material layer on a bottom layer; forming a bottom layer on a substrate; forming a adhesion material layer on the bottom layer; forming a support structure and a sacrificial layer that is filled in a space surrounded by the support structure on the adhesion material layer; forming a capping layer on the support structure and the sacrificial layer, and the bottom layer, the support structure and the capping layer together defining a cavity; and releasing the sacrificial layer and the adhesion material layer to form the cavity structure.

Abstract: Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, which solves the problem in the prior art that viscous force is likely to be generated. The method includes: depositing a first film layer having a large surface roughness on a surface of a silicon wafer that has been subjected to planar planarization, and then blanket etching the first film layer to remove the first film layer. Then, the surface of the first silicon layer facing away from the substrate is further etched to form grooves and protrusions, which provide roughness, thereby forming a silicon wafer with a rough surface. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, and thus the sensitivity of the MEMS device is improved and the probability of out-of-work MEMS device is reduced.

Abstract: Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, which solves the problem in the prior art that viscous force is likely to be generated. The method includes: depositing a first film layer having a large surface roughness on a surface of a silicon wafer that has been subjected to planar planarization, and then blanket etching the first film layer to remove the first film layer. Then, the surface of the first silicon layer facing away from the substrate is further etched to form grooves and protrusions, which provide roughness, thereby forming a silicon wafer with a rough surface. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, and thus the sensitivity of the MEMS device is improved and the probability of out-of-work MEMS device is reduced.

Abstract: The invention provides a method for preparing a MEMS conductive part and a conductive coating. A conductive unit includes a fixed member, a moving member which can reciprocate relative to the fixed member, and a plurality of groups of conductive electroplating layers which are electrically connected with the moving member and the fixed member, the moving member includes a first wall and a second wall connected with the first wall, and the fixed member includes a first wall connected with the first wall. The end components (fixed and moving components) displace relatively freely and transmit electric signals at the same time.

Abstract: Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, for solving the problem that a viscous force is likely to be generated when a smooth surface of the silicon wafer approaches another film layer. The method includes: depositing a porous oxide film layer on a surface of the first silicon planar layer that has been subjected to planar planarization, and then etching the porous oxide film layer by XeF2 vapor etching, during which XeF2 gas passes through the porous oxide film layer to etch the first silicon planar layer in an irregular way. Therefore, the first silicon planar layer has a greater surface roughness. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, improving the sensitivity of the MEMS device and reducing the probability of out-of-work MEMS devices.

Abstract: The present invention provides a motion control structure and a actuator. The motion control structure includes a motion platform, a first actuator having a first execution unit arranged on opposite sides of the motion platform along an X-axis direction and a second execution unit arranged on opposite sides of the motion platform along a Y-axis direction. The first execution unit includes a first actuating element displaced along the X-axis direction. The second execution unit includes a second actuating element displaced along the Y-axis direction. A second actuator surrounds an inner periphery of the motion platform and includes a third execution unit having an assembly portion displaced along the Z-axis direction. The motion control structure of the invention has the advantages that the motion platform can be driven to realize motion in six degrees of freedom.

Abstract: The present disclosure provides a method for manufacturing a polycrystalline silicon thin film, a polycrystalline silicon thin film and an acoustic sensor. The method includes: providing a base material, the base material including a baseplate and a polycrystalline silicon base film stacked with the baseplate; ex-situ doping one of boron, phosphorus and arsenic in the polycrystalline silicon base film to obtain a semi-finished product of the polycrystalline silicon thin film; thermally activating, and then annealing the semi-finished product to obtain the polycrystalline silicon thin film. The polycrystalline silicon thin film manufactured by the method according to the present disclosure has a high uniformity of grain growth, and a reduced surface roughness. Moreover, the polycrystalline silicon thin film also has an excellent mechanical strength, and thus is suitable for applications requiring high mechanical strength. Further, a passing rate in an air blowing test is relatively high.

Abstract: The disclosure provides a plane polishing method and a processing method of the silicon wafer. The plane polishing method includes steps of: depositing a hard mask on a silicon substrate to form a silicon wafer base material; forming an opening on the hard mask by photolithography or etching; carrying out an oxidation reaction on a portion of the silicon substrate exposed by the opening, forming an oxide layer having a bottom embedded in the silicon substrate and a top protruding and exposed outside the hard mask by oxidizing the silicon substrate; and polishing the oxide layer by chemical mechanical planarization. In the present disclosure, the surface formed by the oxide layer and the hard mask flat is flat, without a recess even in the case of large structures, thereby precisely controlling a shape and a depth of the cavity in accordance with an oxidation rate on a silicon substrate.

Abstract: The disclosure provides a plane polishing method and a processing method of the silicon wafer. The plane polishing method includes steps of: depositing a hard mask on a silicon substrate to form a silicon wafer base material; forming an opening on the hard mask by photolithography or etching; carrying out an oxidation reaction on a portion of the silicon substrate exposed by the opening, forming an oxide layer having a bottom embedded in the silicon substrate and a top protruding and exposed outside the hard mask by oxidizing the silicon substrate; and polishing the oxide layer by chemical mechanical planarization. In the present disclosure, the surface formed by the oxide layer and the hard mask flat is flat, without a recess even in the case of large structures, thereby precisely controlling a shape and a depth of the cavity in accordance with an oxidation rate on a silicon substrate.