Abstract: A composition for surface treatment includes fluorosilicic acid (H2SiF6) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.

Abstract: A slurry composition is used to treat a surface of a target structure including at least one of a first polishing target film and a second polishing target film, which include different materials from each other, by a chemical mechanical polishing (CMP) process. The slurry composition includes: polishing particles; a first inhibitor including a nonionic polymer to selectively bond to the first polishing target film; and a second inhibitor including an anionic polymer to selectively bond to the second polishing target film. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a target structure including at least one of a first polishing target film and a second polishing target film; applying the slurry composition onto the target structure; and treating a surface of the target structure by a CMP process while the slurry composition covers the target structure.

Abstract: A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor substrate including a cell area and a peripheral area, a plurality of bottom electrodes on the semiconductor substrate at the cell area, a dielectric layer conformally covering top surfaces and sidewalls of the bottom electrodes, and an upper electrode on the dielectric layer and filling between the bottom electrodes may be provided. A surface roughness of a top surface of the upper electrode may be less than a surface roughness of a side surface of the upper electrode.

Abstract: Compounds of formula (I) are useful for inhibiting a proteasome in a cell. Compounds, pharmaceutical compositions and methods of use are provided herein.