Abstract: A memory controller controls modes for processing requests for a memory device. The modes include a normal mode for processing a memory request and a processing-in-memory (PIM) mode for processing a PIM request. The memory controller includes a bank group scheduler configured to generate a memory command corresponding to a memory request; an arbiter configured to select and output the memory command; and a PIM management circuit configured to generate a PIM command corresponding to a PIM request. The PIM management circuit controls switching between the normal mode and the PIM mode according to, among other criteria, a number of PIM commands.

Abstract: A memory controller controls modes for processing requests for a memory device. The modes include a normal mode for processing a memory request and a processing-in-memory (PIM) mode for processing a PIM request. The memory controller includes a bank group scheduler configured to generate a memory command corresponding to a memory request; an arbiter configured to select and output the memory command; and a PIM management circuit configured to generate a PIM command corresponding to a PIM request. The PIM management circuit controls switching between the normal mode and the PIM mode according to, among other criteria, a number of PIM commands.

Abstract: A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.

Abstract: A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.

Abstract: A semiconductor device may include a media controller configured to output a write requested address when a write request to a nonvolatile memory device is provided from a host; and a cold address manager. The cold address manager may include a stack storing meta data for the write requested address, region information storage configured to manage addresses of the nonvolatile memory device with regions such that length of a region of the regions may vary after a predetermined period, a cold address detector configured to update the stack and the region information storage after the predetermined period and to detect whether an address of the nonvolatile memory device is a cold address, the cold address having write requests performed at less than a predetermined level.

Abstract: A semiconductor device may include a media controller configured to output an address in response to receiving a write request for writing to a nonvolatile memory. The semiconductor device may also include a hot address detector. The hot address detector is configured to store a list including the address output from the media controller and including meta data related to the address, to update the meta data according to the address output from the media controller, to determine whether the address output from the media controller is a hot address, and to adjust a length of the list.

Abstract: A semiconductor device may include a media controller configured to output a write requested address when a write request to a nonvolatile memory device is provided from a host; and a cold address manager. The cold address manager may include a stack storing meta data for the write requested address, region information storage configured to manage addresses of the nonvolatile memory device with regions such that length of a region of the regions may vary after a predetermined period, a cold address detector configured to update the stack and the region information storage after the predetermined period and to detect whether an address of the nonvolatile memory device is a cold address, the cold address having write requests performed at less than a predetermined level.

Abstract: A semiconductor device may include a media controller configured to output an address in response to receiving a write request for writing to a nonvolatile memory. The semiconductor device may also include a hot address detector. The hot address detector is configured to store a list including the address output from the media controller and including meta data related to the address, to update the meta data according to the address output from the media controller, to determine whether the address output from the media controller is a hot address, and to adjust a length of the list.