Abstract: A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance state to the first resistance state is lower than a second threshold voltage for switching the MTJ device from the first resistance state to the second resistance state. The method includes applying a first voltage pulse across the MTJ device with an amplitude having an absolute value equal to or greater than the first threshold voltage and lower than the second threshold voltage, thereby setting the MTJ device to the first resistance state regardless of whether the MTJ device initially is in the first or second resistance state.

Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

Abstract: According to one or more embodiments of the disclosure, an electronic device may include a power amplifier, a voltage generator, an antenna, and a communication processor. The CP determines whether an output waveform of the transmission signal which is output through the antenna is a first waveform or a second waveform. If the output waveform is the first waveform, the voltage generator generates a first output voltage for amplifying the first waveform by applying a first direct current (DC) power source of one or more first voltages. If the output waveform is the second waveform, the voltage generator generates a second output voltage for amplifying the second waveform by applying a second DC power source of a second voltage shifted by a designated level with respect to the first voltage, based on a peak power of the first waveform and a peak power of the second waveform.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.

Abstract: The present disclosure relates to a composition for preventing, alleviating, or treating allodynia caused by anticancer agents, containing cinnamic acid or a pharmaceutically acceptable salt thereof as an active ingredient. The composition of the present disclosure can prevent, alleviate, or treat allodynia by being administered to a subject scheduled to receive anticancer agents or having received anticancer agents.

Abstract: An embedded device includes a first insulation layer, a second insulation layer on the first insulation layer, a lower electrode contact in the first insulation layer in a first region, a first structure, having a lower electrode, a magnetic tunnel junction, and an upper electrode, in the second insulation layer and contacting the lower electrode contact, a first metal wiring structure through the first and second insulation layers in a second region, a third insulation layer on the second insulation layer, a bit line structure through the third insulation layer and the second insulation layer in the first region, the bit line structure having a first height and contacting the upper electrode, and a second metal wiring structure through the third insulation layer in the second region, the second metal wiring structure contacting the first metal wiring structure, and having a second height lower than the first height.

Abstract: An example toner refill cartridge includes a body to accommodate toner, a plunger inserted into the body and movably coupled to the body in a longitudinal direction of the body, and capable of pushing the toner out of the body, a toner injection amount detector to detect each of a plurality of movement positions of the plunger in accordance with the movement of the plunger, and a connection interface to connect to an image forming apparatus to transmit a signal corresponding to each of the detected movement position to the image forming apparatus.

Abstract: A magnetoresistive random access memory device including a first insulating interlayer on a substrate; lower electrode contacts passing through the first insulating interlayer; first structures on the lower electrode contacts, respectively, each of the first structures including a stacked lower electrode, magnetic tunnel junction (MTJ) structure, and upper electrode; a second insulating interlayer on the first structures and the first insulating interlayer, the second insulating interlayer filling a space between the first structures; a third insulating interlayer directly contacting the second insulating interlayer, the third insulating interlayer having a dielectric constant lower than a dielectric constant of the second insulating interlayer; and a bit line passing through the third insulating interlayer and the second insulating interlayer, the bit line contacting the upper electrode of one of the first structures.

Abstract: Disclosed is an electronic device that is configured to determine whether a phase locked loop (PLL) circuit is operating normally, thereby preventing component damage in the electronic device and preventing disconnection from a communication network.

Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

Abstract: The present invention relates to a culture vessel for three-dimensional cell cultivation and a three-dimensional cell co-cultivation method using the same. The culture vessel comprises a well formed by a column positioned thereon and at least one support protruding from the column within the well. In contrast to conventional techniques, the present invention allows cells to be cultured at a position spaced from a culture vessel, thus enjoying the advantage of smoothly supplying oxygen necessary for three-dimensional cell culture structures.

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

Abstract: Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.