Patents by Inventor Woo-jong Yu

Woo-jong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Static random access memories having carbon nanotube thin films
    Patent number: 8796667
    Abstract: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: August 5, 2014
    Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Eun-hong Lee, Un-jeong Kim, Woo-jong Yu, Young-hee Lee
  • Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics
    Patent number: 8022725
    Abstract: A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: September 20, 2011
    Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Un-jeong Kim, Young-hee Lee, Eun-hong Lee, Woo-jong Yu
  • Static random access memories having carbon nanotube thin films
    Publication number: 20100207102
    Abstract: A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.
    Type: Application
    Filed: December 1, 2009
    Publication date: August 19, 2010
    Inventors: Eun-hong Lee, Un-jeong Kim, Woo-jong Yu, Young-hee Lee
  • Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same
    Patent number: 7723223
    Abstract: Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: May 25, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Un-jeong Kim, Young-hee Lee, Jae-young Choi, Woo-jong Yu
  • Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics
    Publication number: 20090267647
    Abstract: A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.
    Type: Application
    Filed: September 26, 2008
    Publication date: October 29, 2009
    Inventors: Un-jeong Kim, Young-hee Lee, Eun-hong Lee, Woo-jong Yu
  • Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same
    Publication number: 20090256175
    Abstract: Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.
    Type: Application
    Filed: September 26, 2008
    Publication date: October 15, 2009
    Inventors: Un-jeong Kim, Young-hee Lee, Jae-young Choi, Woo-jong Yu