Abstract: The present invention relates to a colorimetric biosensor, preparation method thereof, and antibiotic susceptibility testing method using the same, and more specifically, in the present invention, it is possible to prepare a colorimetric biosensor comprising a porous hydrogel structure including polydiacetylene and a hydrogel polymer (alginate, PEG-DA, etc.); and a microbial nutrient source, and it may be applied to a colorimetric biosensor for detecting microorganisms or a method for testing antibiotic susceptibility of microorganisms for allowing in real-time measurement and exhibiting excellent sensitivity using the colorimetric biosensor.

Abstract: An electronic component includes a body, a pair of external electrodes, disposed on both ends of the body in a first direction, respectively, containing at least one of copper and nickel, while not containing a noble metal, a pair of metal frames connected to the pair of external electrodes, respectively, and a pair of conductive bonding layers, disposed between the external electrode and the metal frame, respectively, containing the same metal component as the external electrode.

Abstract: The present invention relates to a peptide with anti-inflammatory activity, wherein the peptide comprises SEQ ID NO: 1, the peptide has above 80% homology of amino acid sequence with above-mentioned sequence, or the peptide is the fragment of the above-mentioned peptides. The present invention also relates to an inflammatory composition comprising the above mentioned peptides. According to the present invention, a peptide comprising a sequence of SEQ ID NO: 1 has an outstanding efficacy in both suppressing inflammation and in prophylactic means. Therefore, the composition comprising the peptide of this invention can be used as anti-inflammatory pharmaceutical composition or as cosmetic composition, in turn, treating and preventing a variety of different types of inflammatory diseases.

Abstract: A thin film transistor (TFT) substrate is disclosed. The TFT substrate includes a substrate, a blocking layer, a source electrode, and a drain electrode on a same layer over the substrate, an active layer overlapping the blocking layer, the source electrode, and the drain electrode, a gate insulation layer over the active layer, a first gate electrode over the gate insulation layer, an interlayer dielectric over the first gate electrode, a first connection electrode over the interlayer dielectric and connected to the active layer and the source electrode through a first contact hole, a second connection electrode over the interlayer dielectric and connected to the active layer and the drain electrode through a second contact hole, a planarization layer over the first connection electrode and the second connection electrode, and a pixel electrode over the planarization layer and connected to the second connection electrode through a third contact hole.

Abstract: A thin film transistor (TFT) substrate is disclosed. The TFT substrate includes a substrate, a blocking layer, a source electrode, and a drain electrode on a same layer over the substrate, an active layer overlapping the blocking layer, the source electrode, and the drain electrode, a gate insulation layer over the active layer, a first gate electrode over the gate insulation layer, an interlayer dielectric over the first gate electrode, a first connection electrode over the interlayer dielectric and connected to the active layer and the source electrode through a first contact hole, a second connection electrode over the interlayer dielectric and connected to the active layer and the drain electrode through a second contact hole, a planarization layer over the first connection electrode and the second connection electrode, and a pixel electrode over the planarization layer and connected to the second connection electrode through a third contact hole.