Patents by Inventor Woo-Jun Yoon

Woo-Jun Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7745820
    Abstract: A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: June 29, 2010
    Assignee: The Ohio State University
    Inventors: Paul R. Berger, Woo-Jun Yoon
  • Publication number: 20100084627
    Abstract: A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.
    Type: Application
    Filed: November 3, 2006
    Publication date: April 8, 2010
    Inventors: Paul R. Berger, Woo-Jun Yoon