Abstract: The present disclosure relates to a healable superplastic amorphous alloy, and specifically, to a healable superplastic amorphous alloy capable of exhibiting superplastic behavior and unique healable behavior by maximizing the complexity of the amorphous structure for an Icosahedral quenched-in nuclei quasi-crystal cluster to be formed in the amorphous matrix through the composition limitation and additive element control of Zr—Cu—Ni—Al alloy.

Abstract: A method for fabricating a semiconductor device, comprises the steps of: forming a field oxide layer on a first conduction type semiconductor substrate having a cell area and a peripheral circuit area, the field oxide layer defining active and field regions in the device; respectively forming first and second gates having capping layers thereon in the cell and peripheral circuit areas after placing a gate insulating layer on the semiconductor substrate; forming first and second impurity regions respectively in the cell and peripheral circuit areas by ion-implantation of a second conduction type impurity using the capping layers as a mask; forming an etching stop layer on the semiconductor substrate to cover the field oxide layer and sides of the first and second gates, forming a sacrificing layer on the etching stop layer, and forming a contact hole exposing the first impurity region; forming a plug contacting with the first impurity region within the contact hole and removing the remaining sacrificing layer

Abstract: A method of forming an isolation layer of a semiconductor device including active regions on a substrate and device isolation regions for isolating the active regions from one another includes the steps of forming a nitride layer on the active region of a semiconductor substrate, forming trenches of a predetermined depth in the semiconductor substrate at peripheral portions of the device isolation regions, and filling the trenches with a nitride material and performing a field oxidation process.