Abstract: A method for forming through-via metal wiring is disclosed. According to the method, through-via metal wiring can be formed with excellent plating quality without an expensive sputtering process by bonding a metal foil to one side of a substrate having a through-via formed therein and using the foil as a metal seed layer.

Abstract: A dissection device for tissue includes a device body unit, a cauterization electrode, and a dissecting pressure injection tube provided in the device body unit. The dissection device applies a dissecting pressure to tissue layers having an anatomical plane, so as to easily and accurately find the anatomical plane of tissue to be dissected, and safely, easily and quickly dissect human tissue without a risk of tissue damage.

Abstract: Provided is a variety identification-encoding system, including: a chromosome-decoding module decoding a chromosome of a reference genome variety and a chromosome of a target variety; a variation region-detecting module detecting a variation region in the decoded chromosome through single nucleotide variation dense region analysis; an amplification result-acquiring module setting an indel marker in the detected variation region and amplifying the indel marker by a polymerase chain reaction (PCR) to acquire an amplification result; and an encoding module encoding the amplification result.

Abstract: Provided is a variety identification-encoding system, including: a chromosome-decoding module decoding a chromosome of a reference genome variety and a chromosome of a target variety; a variation region-detecting module detecting a variation region in the decoded chromosome through single nucleotide variation dense region analysis; an amplification result-acquiring module setting an indel marker in the detected variation region and amplifying the indel marker by a polymerase chain reaction (PCR) to acquire an amplification result; and an encoding module encoding the amplification result.

Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.

Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.