Abstract: A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

Abstract: An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by the rotating means to rotate to the inspection position, an inspection apparatus for acquiring inspection data associated with the wafer, and a controller for determining an amending angle from the rotational angle and for amending the inspection data in accordance with the amending angle to calculate amended inspection data, wherein the amended inspection data reflects a state of the wafer on the rotating means.

Abstract: An inspection system for inspecting a wafer and an inspection method thereof are provided. The inspection system includes a rotating means for turning and arranging a wafer to an inspection position, an angle measuring means for measuring a rotational angle used by the rotating means to rotate to the inspection position, an inspection apparatus for acquiring inspection data associated with the wafer, and a controller for determining an amending angle from the rotational angle and for amending the inspection data in accordance with the amending angle to calculate amended inspection data, wherein the amended inspection data reflects a state of the wafer on the rotating means.

Abstract: A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

Abstract: A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

Abstract: A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

Abstract: A semiconductor device capacitor has a storage electrode wherein the impurity concentration decreases from the bottom to the top thereof. The semiconductor device capacitor is formed on a lower structure of a semiconductor substrate burying a contact hole formed on the semiconductor substrate. The impurity concentration linearly or non-linearly decreases going upward from the bottom of the contact hole to the top of the storage electrode. A method of manufacturing the semiconductor device capacitor also provides that the storage electrode is formed such that the concentration of impurities decreases linearly or non-linearly going upward from the bottom toward the top.

Abstract: A semiconductor device capacitor has a storage electrode wherein the impurity concentration decreases from the bottom to the top thereof. The semiconductor device capacitor is formed on a lower structure of a semiconductor substrate burying a contact hole formed on the semiconductor substrate. The impurity concentration linearly or non-linearly decreases going upward from the bottom of the contact hole to the top of the storage electrode. A method of manufacturing the semiconductor device capacitor also provides that the storage electrode is formed such that the concentration of impurities decreases linearly or non-linearly going upward from the bottom toward the top.