Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: Several embodiments of photolithography systems and associated methods of alignment correction are disclosed herein. In one embodiment, a method for correcting alignment errors in a photolithography system includes detecting a first alignment error at a first location of a first microelectronic substrate and a second alignment error at a second location of a second microelectronic substrate. The second location generally corresponds to the first location. The method also includes deriving a statistical dispersion between the first alignment error and the second alignment error and associating the first and second locations with an alignment procedure based on the derived statistical dispersion.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: A photolithography monitoring mark on a substrate includes a plurality of sets of lines. Individual of the sets include a plurality of substantially parallel lines comprising different widths arrayed laterally outward in opposing lateral directions from an axial center of the set. The different widths decrease in each of the opposing lateral directions laterally outward from the axial center of the set. Other implementations are disclosed.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: Several embodiments of photolithography systems and associated methods of focus correction are disclosed herein. In one embodiment, a method for characterizing focus errors in a photolithography system includes placing a microelectronic substrate onto a substrate support of the photolithography system. The microelectronic substrate is divided into a plurality of fields individually partitioned into a plurality of regions. The method also includes developing a raw focus error map that has a focus error corresponding to the individual regions of the plurality of fields and deriving at least one of an inter-field focus error map and an intra-field focus error map based on the raw focus error map. The inter-field focus error map has an inter-field focus error corresponding to the individual fields, and the intra-field focus error map has an intra-field focus error corresponding to the individual regions.

Abstract: A photolithography monitoring mark on a substrate includes a plurality of sets of lines. Individual of the sets include a plurality of substantially parallel lines comprising different widths arrayed laterally outward in opposing lateral directions from an axial center of the set. The different widths decrease in each of the opposing lateral directions laterally outward from the axial center of the set. Other implementations are disclosed.

Abstract: Several embodiments of photolithography systems and associated methods of alignment correction are disclosed herein. In one embodiment, a method for correcting alignment errors in a photolithography system includes detecting a first alignment error at a first location of a first microelectronic substrate and a second alignment error at a second location of a second microelectronic substrate. The second location generally corresponds to the first location. The method also includes deriving a statistical dispersion between the first alignment error and the second alignment error and associating the first and second locations with an alignment procedure based on the derived statistical dispersion.

Abstract: Several embodiments of photolithography systems and associated methods of focus correction are disclosed herein. In one embodiment, a method for characterizing focus errors in a photolithography system includes placing a microelectronic substrate onto a substrate support of the photolithography system. The microelectronic substrate is divided into a plurality of fields individually partitioned into a plurality of regions. The method also includes developing a raw focus error map that has a focus error corresponding to the individual regions of the plurality of fields and deriving at least one of an inter-field focus error map and an intra-field focus error map based on the raw focus error map. The inter-field focus error map has an inter-field focus error corresponding to the individual fields, and the intra-field focus error map has an intra-field focus error corresponding to the individual regions.

Abstract: Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a photolithography system includes measuring a plurality of first overlay errors that individually correspond to a microelectronic substrate in a first batch of microelectronic substrates. The method also includes determining a relationship between the first overlay errors and a first sequence of the microelectronic substrates in the first batch. The method further includes correcting a second overlay error of individual microelectronic substrates in a second batch based on a second sequence of the microelectronic substrates in the second batch and the determined relationship.

Abstract: A via structure is disclosed for use in a multi-layered semiconductor device, for forming electrical contacts between prescribed layers of the vertically aligned structures. The via structures include a plurality of adjacent frame shaped hole structures which extend between the prescribed layers of the device, and which are filled with metal to form frame shaped vias. The width of each of the sides of the frame is chosen to be equal to an integer multiple of half of the minimum pitch of the semiconductor processing, with the distance between adjacent frame shaped via structures being approximately equal to an integer multiple of half of the minimum pitch of the semiconductor processing.

Abstract: A via structure is disclosed for use in a multi-layered semiconductor device, for forming electrical contacts between prescribed layers of the vertically aligned structures. The via structures include a plurality of adjacent frame shaped hole structures which extend between the prescribed layers of the device, and which are filled with metal to form frame shaped vias. The width of each of the sides of the frame is chosen to be equal to an integer multiple of half of the minimum pitch of the semiconductor processing, with the distance between adjacent frame shaped via structures being approximately equal to an integer multiple of half of the minimum pitch of the semiconductor processing.