Abstract: A sterilization module including a light source configured to irradiate ultraviolet light, a board on which the light source is mounted, a protective tube accommodating the board therein and configured to transmit ultraviolet light irradiated from the light source, a first base coupled to one side of the protective tube, and a second base coupled to the other side of the protective tube, in which at least one of the first base and the second base includes an insertion part to be inserted into the protective tube, the insertion part having a first diameter when viewed in a first cross-section perpendicular to a length direction of the protective tube, and a cover part integrally formed on the insertion part and having a second diameter greater than the first diameter in the first cross-section.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: According to examples of the present disclosure, the organometallic compound is represented by Formula 1 below, which is used as a precursor when a Group 4 metal-containing thin film is deposited to provide a high-quality Group 4 metal-containing thin film. In Formula 1, M is Zr or Hf, R1 is selected from a linear alkyl group having 2 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R2 is a linear alkyl group having 1 to 3 carbon atoms, and R1 and R2 are different from each other.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Abstract: According to one embodiment of the present invention, a method of forming a thin film using a surface protection material, the method comprising: supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film, wherein before forming the thin film, the method further comprises: supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and purging the interior of the chamber.

Abstract: According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed; purging the interior of the chamber; supplying a doping precursor to the inside of the chamber; purging the interior of the chamber; supplying a first reactant to the inside of the chamber so that the first reactant reacts with the adsorbed doping precursor to form a doping thin film; supplying a dielectric film precursor to the inside of the chamber; purging the interior of the chamber; and supplying a second reactant to the inside of the chamber so that the second reactant reacts with the adsorbed dielectric film precursor to form a dielectric film.

Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.