Patents by Inventor Woong-ki Hong
Woong-ki Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9966375Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.Type: GrantFiled: February 22, 2016Date of Patent: May 8, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Joon Choi, Tae-Yong Kwon, Mirco Cantoro, Chang-Jae Yang, Dong-Hoon Khang, Woo-Ram Kim, Cheol Kim, Seung-Jin Mun, Seung-Mo Ha, Do-Hyoung Kim, Seong-Ju Kim, So-Ra You, Woong-ki Hong
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Publication number: 20160315085Abstract: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.Type: ApplicationFiled: February 22, 2016Publication date: October 27, 2016Inventors: Yong-Joon CHOI, Tae-Yong KWON, Mirco CANTORO, Chang-Jae YANG, Dong-Hoon KHANG, Woo-Ram KIM, Cheol KIM, Seung-Jin MUN, Seung-Mo HA, Do-Hyoung KIM, Seong-Ju KIM, So-Ra YOU, Woong-ki HONG
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Patent number: 8202751Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: GrantFiled: December 1, 2010Date of Patent: June 19, 2012Assignee: Samsung LED Co., Ltd.Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Patent number: 8053786Abstract: Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: GrantFiled: August 31, 2010Date of Patent: November 8, 2011Assignee: Samsung LED Co., Ltd.Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Publication number: 20110086448Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: ApplicationFiled: December 1, 2010Publication date: April 14, 2011Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Patent number: 7880176Abstract: Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: GrantFiled: July 22, 2005Date of Patent: February 1, 2011Assignee: Samsung LED Co., Ltd.Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Publication number: 20110018027Abstract: Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: ApplicationFiled: August 31, 2010Publication date: January 27, 2011Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Patent number: 7872271Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: GrantFiled: July 12, 2005Date of Patent: January 18, 2011Assignee: Samsung Led Co., Ltd.Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Patent number: 7666693Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.Type: GrantFiled: July 25, 2008Date of Patent: February 23, 2010Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: June-o Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong
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Publication number: 20080299687Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.Type: ApplicationFiled: July 25, 2008Publication date: December 4, 2008Applicants: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: June-o Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong
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Publication number: 20080224165Abstract: Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: ApplicationFiled: July 22, 2005Publication date: September 18, 2008Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Patent number: 7417264Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.Type: GrantFiled: December 15, 2004Date of Patent: August 26, 2008Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: June-o Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong
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Publication number: 20080121914Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.Type: ApplicationFiled: July 12, 2005Publication date: May 29, 2008Inventors: Tae-Yeon Seong, June-O Song, Kyoung-Kook Kim, Woong-Ki Hong
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Publication number: 20050133809Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.Type: ApplicationFiled: December 15, 2004Publication date: June 23, 2005Applicants: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: June-o Song, Tae-yeon Seong, Joon-seop Kwak, Woong-ki Hong