Patents by Inventor Woong-Kwon Kim
Woong-Kwon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140306901Abstract: A method of processing touch-image data includes calculating a plurality of motion vectors using a plurality of low-resolution touch-image data frames, aligning sensing data corresponding to an object detected in the low-resolution touch-image data frames using the motion vectors to generate an overlapped touch-image data frame, generating high-resolution data corresponding to the detected object using the overlapped touch-image data frame and detecting the touch position and generating touch position data of the detected object using the high-resolution touch position data corresponding to the detected object.Type: ApplicationFiled: December 16, 2013Publication date: October 16, 2014Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: Noboru Takeuchi, Tadashi Amino, Dae-Cheol Kim, Woong-Kwon Kim, Byeong-Hoon Cho
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Publication number: 20140287542Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.Type: ApplicationFiled: June 6, 2014Publication date: September 25, 2014Inventors: Suk Won JUNG, Byeong Hoon CHO, Sung Hoon YANG, Woong Kwon KIM, Sang Youn HAN, Dae Cheol KIM, Ki-Hun JEONG, Kyung-Sook JEON, Seung Mi SEO, Jung-Suk BANG, Kun-Wook Han
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Publication number: 20140247403Abstract: A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element and extending in a direction, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern.Type: ApplicationFiled: October 29, 2013Publication date: September 4, 2014Applicant: Samsung Display Co., Ltd.Inventors: Sung-Jin MUN, Dae-Cheol KIM, Woong-Kwon KIM, Sung-Ryul KIM, Ki-Hun JEONG, Byeong-Hoon CHO, Jung-Suk Bang, Kun-Wook HAN
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Publication number: 20140232972Abstract: A display substrate includes a base substrate, a reflection controlling layer disposed on the base substrate, and a metal wiring layer disposed on the reflection controlling layer. The metal wiring layer comprises an opaque metal. The reflection controlling layer changes wavelength-specific reflectance of reflected light using destructive interference. The reflected light is reflected from the metal wiring layer through the base substrate and the reflection controlling layer.Type: ApplicationFiled: August 8, 2013Publication date: August 21, 2014Applicant: Samsung Display Co., Ltd.Inventors: Dae-Cheol KIM, Dong-Kwon Kim, Woong-Kwon Kim, Ki-Hun Jeong, Byeong-Hoon Cho, Kun-Wook Han
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Patent number: 8796626Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.Type: GrantFiled: July 29, 2011Date of Patent: August 5, 2014Assignee: Samsung Display Co., Ltd.Inventors: Kun-Wook Han, Sung-Ryul Kim, Woong-Kwon Kim, Dae-Cheol Kim, Ki-Hun Jeong, Jung-Suk Bang, Yun-Jong Yeo, Byeong-Hoon Cho, Hong-Kee Chin, Sung-Jin Mun
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Publication number: 20140211103Abstract: Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns.Type: ApplicationFiled: October 1, 2013Publication date: July 31, 2014Applicant: Samsung Display Co., Ltd.Inventors: Seung Soo BAEK, Woong Kwon KIM, Sang Ho KIM, Jae-Jin SONG, Sang Wook LEE, Hea Chun LEE, Young Goo SONG, Nam-Heon KIM, Dae Cheol KIM, Sung Ryul KIM, Jung Suk BANG, Ki Hun JEONG
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Patent number: 8785932Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.Type: GrantFiled: July 13, 2011Date of Patent: July 22, 2014Assignee: Samsung Display Co., Ltd.Inventors: Suk Won Jung, Byeong Hoon Cho, Sung Hoon Yang, Woong Kwon Kim, Sang Youn Han, Dae Cheol Kim, Ki-Hun Jeong, Kyung-Sook Jeon, Seung Mi Seo, Jung-Suk Bang, Kun-Wook Han
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Publication number: 20140184942Abstract: A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire.Type: ApplicationFiled: August 14, 2013Publication date: July 3, 2014Applicant: Samsung Display Co., Ltd.Inventors: Jung Suk BANG, Ki-Hun JEONG, Dae Cheol KIM, Sung Ryul KIM, Woong Kwon KIM, Sung Jin MUN, Byeong Hoon CHO, Kun-Wook HAN
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Patent number: 8698144Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.Type: GrantFiled: March 25, 2010Date of Patent: April 15, 2014Assignee: Samsung Display Co., Ltd.Inventors: Kyung-Sook Jeon, Kap-Soo Yoon, Woong-Kwon Kim, Sang-Youn Han, Jun-Ho Song, Sung-Hoon Yang, Byeong-Hoon Cho, Dae-Cheol Kim, Ki-Hun Jeong, Jung-Suk Bang
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Patent number: 8685770Abstract: A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.Type: GrantFiled: October 14, 2010Date of Patent: April 1, 2014Assignee: Samsung Display Co., Ltd.Inventors: Dae-Cheol Kim, Woong-Kwon Kim, Sang-Youn Han
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Patent number: 8598587Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.Type: GrantFiled: August 12, 2011Date of Patent: December 3, 2013Assignee: Samsung Display Co., Ltd.Inventors: Yun Jong Yeo, Hong-Kee Chin, Byeong Hoon Cho, Ki-Hun Jeong, Jung Suk Bang, Woong Kwon Kim, Sung Ryul Kim, Dae Cheol Kim, Kun-Wook Han
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Patent number: 8450129Abstract: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.Type: GrantFiled: September 13, 2011Date of Patent: May 28, 2013Assignee: Samsung Display Co., Ltd.Inventors: Hong-Kee Chin, Sang-Gab Kim, Woong-Kwon Kim, Yong-Mo Choi, Seung-Ha Choi, Shin-Il Choi, Ho-Jun Lee, Jung-Suk Bang, Yu-Gwang Jeong
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Patent number: 8350994Abstract: A liquid crystal display consistent with the present invention comprises an insulating substrate having a signal line and a scan line. The scan line forms a crossing pattern with the signal line. A switching device is connected to the signal line and the scan line. An interlayer insulating film is formed on top of the signal line, the scan line, and the switching device. A pixel electrode is formed on the interlayer insulating film and connected to the switching device. A trench is formed in a part of the interlayer insulating film where the pixel electrode is not formed. Finally, a black matrix is formed in a predetermined part of the trench.Type: GrantFiled: February 4, 1999Date of Patent: January 8, 2013Assignee: LG Display Co., Ltd.Inventor: Woong-Kwon Kim
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Patent number: 8325302Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.Type: GrantFiled: March 12, 2010Date of Patent: December 4, 2012Assignee: Samsung Display Co., Ltd.Inventors: Byeong-Hoon Cho, Sung-Hoon Yang, Kap-Soo Yoon, Ki-Hun Jeong, Kyung-Sook Jeon, Woong-Kwon Kim, Sang-Youn Han, Dae-Cheol Kim, Jung-Suk Bang
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Patent number: 8294837Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.Type: GrantFiled: October 5, 2010Date of Patent: October 23, 2012Assignee: Samsung Display Co., Ltd.Inventors: Woong-Kwon Kim, Dae-Cheol Kim, Dong-Kwon Kim, Ki-Hun Jeong, Sung-Hoon Yang, Sang-Youn Han, Suk-Won Jung, Byeong-Hoon Cho, Kyung-Sook Jeon, Seung-Mi Seo, Jung-Suk Bang, Mi-Seon Seo
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Publication number: 20120248452Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.Type: ApplicationFiled: August 12, 2011Publication date: October 4, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun Jong YEO, Hong-Kee CHIN, Byeong Hoon CHO, Ki-Hun JEONG, Jung Suk BANG, Woong Kwon KIM, Sung Ryul KIM, Dae Cheol KIM, Kun-Wook HAN
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Publication number: 20120228505Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.Type: ApplicationFiled: July 29, 2011Publication date: September 13, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kun-Wook HAN, Sung-Ryul KIM, Woong-Kwon KIM, Dae-Cheol KIM, Ki-Hun JEONG, Jung-Suk BANG, Yun-Jong YEO, Byeong-Hoon CHO, Hong-Kee CHIN, Sung-jin MUN
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Patent number: 8233120Abstract: A liquid crystal display device includes gate and data lines defining a pixel region on a first substrate. A first insulating layer covers the gate line and a gate electrode. A thin film transistor, formed at a crossing region of the gate and data lines, has the gate electrode, a semiconductor layer, a source electrode, and a drain electrode. A red, green or blue color filter is formed over the first insulating layer in the pixel region. A drain contact hole exposes the drain electrode. A light-shielding color filter pattern including at least two of red, green and blue resins is formed over the semiconductor layer. A pixel electrode is formed over the color filter in the pixel region and contacts the drain electrode. A common electrode is formed on a second substrate facing the first substrate with a liquid crystal layer interposed between the common and pixel electrodes.Type: GrantFiled: January 4, 2012Date of Patent: July 31, 2012Assignee: LG Display Co., Ltd.Inventors: Woong-Kwon Kim, Seung-Ryull Park
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Publication number: 20120188204Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.Type: ApplicationFiled: September 23, 2011Publication date: July 26, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Jong YEO, Byeong-Hoon CHO, Ki-Hun JEONG, Hong-Kee CHIN, Jung-Suk BANG, Woong-Kwon KIM, Sung-Ryul KIM, Hee-Joon KIM, Dae-Cheol KIM, Kun-Wook HAN
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Publication number: 20120138929Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.Type: ApplicationFiled: July 13, 2011Publication date: June 7, 2012Inventors: Suk Won JUNG, Byeong Hoon CHO, Sung Hoon YANG, Woong Kwon KIM, Sang Youn HAN, Dae Cheol KIM, Ki-Hun JEONG, Kyung-Sook JEON, Seung Mi SEO, Jung-Suk BANG, Kun-Wook HAN