Abstract: Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.

Abstract: Provided are a method of forming silicon nitride at a low temperature, a charge trap memory device including crystalline nano dots formed by using the same, and a method of manufacturing the charge trap memory device. The method of forming silicon nitride includes loading a substrate into a chamber of a silicon nitride deposition device comprising a filament; increasing a temperature of the filament to a temperature whereby a reactant gas to be injected into the chamber may be dissociated; and injecting the reactant gas into the chamber so as to form a crystalline silicon nitride film or crystalline silicon nitride nano dots on the substrate. In the method, the temperature of the filament may be maintained at 1,400° C.˜2,000° C., and a pressure in the chamber may be maintained at several to several ten torr when the reactant gas in injected into the chamber.