Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: A display device includes a substrate, a transistor on the substrate, a pixel electrode connected to the transistor, a bank layer disposed on the pixel electrode and defining a pixel opening overlapping the pixel electrode, an emission layer in the pixel opening, a common electrode on the emission layer and the bank layer, an encapsulation layer on the common electrode, a sensing electrode on the encapsulation layer, a first insulating layer disposed on the encapsulation layer and overlapping the pixel opening, a second insulating layer on the first insulating layer, and a third insulating layer surrounding the first insulating layer. A refractive index of the first insulating layer, a refractive index of the second insulating layer, and a refractive index of the third insulating layer are different from one another, and the refractive index of the first insulating layer is greater than the refractive index of the third insulating layer.

Abstract: According to an exemplary embodiment, an organic light emitting diode display includes: a substrate; a semiconductor layer; a first gate insulating layer disposed on the oxide semiconductor layer; a first gate layer disposed on the first gate insulating layer; a first interlayer insulating layer disposed on the first gate layer; a first data layer disposed on the first interlayer insulating layer; a second interlayer insulating layer disposed on the first data layer; a driving voltage line and a driving low voltage line disposed on the second interlayer insulating layer and separated from each other; an upper insulating layer covering the driving voltage line and the driving low voltage line; and an anode disposed on the upper insulating layer and overlapping the driving voltage line or the driving low voltage line.

Abstract: A stage of a scan driver includes: a first driving controller for controlling a voltage of a first node and a voltage of a second node; a second driving controller for controlling a voltage of a first driving node, based on a sensing-on signal, a next carry signal, a first control clock signal, a second control clock signal, the voltage of the first node, and a voltage of a sampling node, and controlling a voltage of a second driving node, based on the voltage of the sampling node and the voltage of the first driving node; an output buffer for outputting a carry signal, the first scan signal, and the second scan signal; and a coupling controller. The second driving controller maintains the voltage of the first driving node as a gate-off voltage in response to the voltage of the second driving node and a third control clock signal.

Abstract: According to an exemplary embodiment, an organic light emitting diode display includes: a substrate; a semiconductor layer; a first gate insulating layer disposed on the oxide semiconductor layer; a first gate layer disposed on the first gate insulating layer; a first interlayer insulating layer disposed on the first gate layer; a first data layer disposed on the first interlayer insulating layer; a second interlayer insulating layer disposed on the first data layer; a driving voltage line and a driving low voltage line disposed on the second interlayer insulating layer and separated from each other; an upper insulating layer covering the driving voltage line and the driving low voltage line; and an anode disposed on the upper insulating layer and overlapping the driving voltage line or the driving low voltage line.

Abstract: According to an exemplary embodiment, an organic light emitting diode display includes: a substrate; a semiconductor layer; a first gate insulating layer disposed on the oxide semiconductor layer; a first gate layer disposed on the first gate insulating layer; a first interlayer insulating layer disposed on the first gate layer; a first data layer disposed on the first interlayer insulating layer; a second interlayer insulating layer disposed on the first data layer; a driving voltage line and a driving low voltage line disposed on the second interlayer insulating layer and separated from each other; an upper insulating layer covering the driving voltage line and the driving low voltage line; and an anode disposed on the upper insulating layer and overlapping the driving voltage line or the driving low voltage line.

Abstract: A stage of a scan driver includes: a first driving controller for controlling a voltage of a first node and a voltage of a second node; a second driving controller for controlling a voltage of a first driving node, based on a sensing-on signal, a next carry signal, a first control clock signal, a second control clock signal, the voltage of the first node, and a voltage of a sampling node, and controlling a voltage of a second driving node, based on the voltage of the sampling node and the voltage of the first driving node; an output buffer for outputting a carry signal, the first scan signal, and the second scan signal; and a coupling controller. The second driving controller maintains the voltage of the first driving node as a gate-off voltage in response to the voltage of the second driving node and a third control clock signal.

Abstract: According to an exemplary embodiment, an organic light emitting diode display includes: a substrate; a semiconductor layer; a first gate insulating layer disposed on the oxide semiconductor layer; a first gate layer disposed on the first gate insulating layer; a first interlayer insulating layer disposed on the first gate layer; a first data layer disposed on the first interlayer insulating layer; a second interlayer insulating layer disposed on the first data layer; a driving voltage line and a driving low voltage line disposed on the second interlayer insulating layer and separated from each other; an upper insulating layer covering the driving voltage line and the driving low voltage line; and an anode disposed on the upper insulating layer and overlapping the driving voltage line or the driving low voltage line.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

Abstract: A light emitting display for improving image quality and a Thin Film Transistor (TFT) includes at least one data line for transmitting a data signal, at least one scanning line for transmitting a selected signal, and at least one pixel electrically connected to the data line and the scanning line. The pixel includes a first TFT for responding to the selected signal and transmitting the data signal to an organic light emitting device, a capacitor electrically connected to the first TFT and storing a voltage corresponding to the transmitted data signal, a second TFT connected to the capacitor and supplying an organic light emitting device with a current corresponding to the data signal selected by the selected signal. The widths of respective channel regions of the first TFT are different from each other to reduce the kickoff voltage and improve the driving ability of the TFT, thereby improving the image quality of the light emitting display.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

Abstract: A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.

Abstract: A display device displays an image having a substantially uniform brightness by compensating for variations of the threshold voltages of driving transistors and compensating for the deterioration of an organic light emitting diode. A pixel includes an organic light emitting diode, two transistors, a storage capacitor, and a compensation unit. A driving transistor supplies a current to an OLED corresponding to the voltage in the storage capacitor. The compensation unit controls a voltage of a gate electrode of the driving transistor corresponding to a deterioration of the organic light emitting diode, and couples one electrode of the driving transistor to the data line during a compensation period, during which a threshold voltage of the driving transistor is compensated.

Abstract: A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.

Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.

Abstract: A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

Abstract: A light emitting display including a plurality of scan lines; a plurality of data lines crossing the scan lines; a plurality of pixels defined by the scan lines and the data lines; and a light emitting device formed on a pixel and comprising a first electrode and a second electrode. A pixel connected to an nth data line includes a switching transistor that turns on in response to a selection signal supplied from a scan line; a storage capacitor to store a voltage corresponding to a data signal supplied from the nth data line when the switching transistor is turned on; and a driving transistor to supply a current corresponding to the voltage stored in the storage capacitor to the first electrode. The storage capacitor is formed between the first electrode and an (n+1)th data line.

Abstract: A display and a method of manufacturing the same, including a substrate including an image displaying part comprising a plurality of pixels, a dummy testing pad, and a first insulating layer covering the dummy testing pad.