Abstract: Provided is an apparatus for evaluating high-temperature creep behavior of metals, the apparatus including a chamber configured to fix a metal sample in an inner space sealed from an external environment, and including, at a lower portion, a metal tube stretchable in a length direction by a pressure of a gas, wherein the apparatus is configured in such a manner that a load received by the chamber in the length direction due to the pressure of the gas injected into the chamber is applied to the metal sample.

Abstract: Provided is an apparatus for evaluating high-temperature creep behavior of metals, the apparatus including a chamber configured to fix a metal sample in an inner space sealed from an external environment, and including, at a lower portion, a metal tube stretchable in a length direction by a pressure of a gas, wherein the apparatus is configured in such a manner that a load received by the chamber in the length direction due to the pressure of the gas injected into the chamber is applied to the metal sample.

Abstract: An oxidation-resistant ferritic stainless steel including a ferritic stainless steel base material, and a Cu-containing spinel-structured oxide.

Abstract: The present invention relates to a steel composition for bearing having improved fatigue durability and a method of manufacturing the same. The steel composition comprises: an amount of about 0.08 to 1.0 wt % of carbon (C); an amount of about 0.9 to 1.6 wt % of silicon (Si); an amount greater than 0 wt % and of about 0.03 wt % or less of phosphorus (P); an amount greater than 0 wt % and of about 0.01 wt % or less of sulfur (S); an amount of about 0.01 to 0.1 wt % of copper (Cu); an amount of about 0.01 to 0.06 wt % of aluminum (Al); an amount greater than 0 wt % and of about 0.006 wt % or less of nitrogen (N); an amount greater than 0 wt % and of about 0.001 wt % or less of oxygen (O); one or more selected from the group consisting of: an amount of about 0.5 to 1.00 wt % of manganese (Mn), an amount of about 0.1 to 0.6 wt % of nickel (Ni), an amount of about 1.4 to 1.55 wt % of chromium (Cr), an amount of about 0.2 to 0.5 wt % of molybdenum (Mo), and an amount greater than 0 wt % and of about 0.

Abstract: An oxidation-resistant ferritic stainless steel comprising: a ferritic stainless steel comprising Cr, wherein a {110} grain orientation fraction of a surface of the ferritic stainless steel as measured using electron back scattered diffraction pattern (EBSD) is about 5% or more; and a chromium oxide layer formed on the surface of the ferritic stainless steel is provided.

Abstract: Nano-sized titanium nitride powder can be prepared by a simple process comprising subjecting mixed powder of titanium trichloride and lithium nitride to high-energy ball milling using a plurality of balls in an airtight reactor vessel under an inert gas atmosphere to form composite powder, and recovering the titanium nitride powder therefrom.

Abstract: Provided are a stainless steel having excellent high-temperature strength and a method of manufacturing the same, and more particularly, an austenitic stainless steel having excellent high-temperature and creep strength as well as excellent corrosion resistance able to be used in high-temperature corrosive environments such as power plants and a method of manufacturing the same. The stainless steel of the present invention may have a precipitation index of 1.5 to 2.5.

Abstract: Nano-sized titanium nitride powder can be prepared by a simple process comprising subjecting mixed powder of titanium trichloride and lithium nitride to high-energy ball milling using a plurality of balls in an airtight reactor vessel under an inert gas atmosphere to form composite powder, and recovering the titanium nitride powder therefrom.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.