Abstract: According to certain embodiments, an electronic device comprises: a housing; an electronic component disposed in the housing, wherein the electronic component generates heat during operation; a support cover disposed on the electronic component; a metal member overlapping with the electronic component while interposing the support cover between the metal member and the electronic component; a switching unit selectively forming or disconnecting an electrical connection path of the support cover and the metal member; and at least one processor configured to select an antenna tuning code, based at least in part on whether the switching unit forms or disconnects the electrical connection path, wherein the switching unit includes: a receiving member electrically connected to the support cover and providing a receiving space; a thermally deforming member received in the receiving space, wherein the thermally deforming member deforms based on a temperature; and an elevating member configured to move upwardly to elec

Abstract: In embodiments, an electronic device may include a housing having an inner space, a printed circuit board (PCB) disposed in the inner space of the housing, a first antenna structure disposed at a position spaced apart from the PCB, and transmitting and/or receiving a radio signal in a first frequency band, at least one second antenna structure disposed at a position spaced apart from the PCB, and transmitting and/or receiving a radio signal in a second frequency band different from the first frequency band, and a flexible substrate electrically connecting the PCB and the first antenna structure.

Abstract: According to the invention, in extrusion molding of a control arm of aluminum, control arm is manufactured by a variable curvature extruding process that simultaneously form straight sections and a curved section in extruding a raw material, without pressing forming that is accompanied by solution heat-treatment for forming a carrier fastening end and a bush fastening end at both ends of control arm. Therefore, since the press forming that is required in the extrusion molding of control arm is removed, the manufacturing process is simplified and the manufacturing cost is reduce. Further, the entire extrusion profile cross section of control arm has a double-hollow closed cross section to distribute loads, such that durability of a load-concentrated portion of control arm is increased and the loads can be more effectively distributed.

Abstract: An Al—Si—Mg-based aluminum alloy includes about 1.2 to about 1.4 wt % of Si, about 0.6 to about 0.75 wt % of Mg, about 0.8 to about 1.0 wt % of Sn, and Al and impurities as the balance on the basis of the total weight of the aluminum alloy.

Abstract: According to the invention, in extrusion molding of a control arm of aluminum, control arm is manufactured by a variable curvature extruding process that simultaneously form straight sections and a curved section in extruding a raw material, without pressing forming that is accompanied by solution heat-treatment for forming a carrier fastening end and a bush fastening end at both ends of control arm. Therefore, since the press forming that is required in the extrusion molding of control arm is removed, the manufacturing process is simplified and the manufacturing cost is reduce. Further, the entire extrusion profile cross section of control arm has a double-hollow closed cross section to distribute loads, such that durability of a load-concentrated portion of control arm is increased and the loads can be more effectively distributed.

Abstract: A semiconductor multi-layered structure (1) having non-uniform quantum dots formed without requiring lattice strain is of a double hetero junction structure in which an active layer (3) has clad layers (5, 6, 16) laid on its opposite sides, wherein the clad layers are larger in forbidden band than the active layer (3), and the active layer (3) includes at least one layer of non-uniform quantum dots (2) formed without requiring lattice strain and wherein the non-uniform quantum dots in the layer (2) are composed of compound semiconductor material and different from one another in either size or material composition or both. A light emitting diode (15, 15?), a semiconductor laser diode (20) and a semiconductor light amplifier (30) are also provided, each having a semiconductor multi-layered structure (1, 1?) with non-uniform quantum dots. They can emit or amplify light wide in range of wavelengths.