Abstract: An electronic package is provided. The electronic package includes: a substrate comprising a substrate surface, and a first set of conductive patterns and a second set of conductive patterns on the substrate surface; at least one electronic component attached on the substrate surface and electrically connected to the second set of conductive patterns; an encapsulant layer encapsulating the at least one electronic component and exposing the first set of conductive patterns; and a shielding layer formed over the encapsulant layer and not over the first set of conductive patterns, wherein the shielding layer is formed of a conductive ink cured by ultraviolet light.

Abstract: A semiconductor device has a semiconductor die with a sensitive area. A dam wall is formed over the semiconductor die proximate to the sensitive area. In one embodiment, the dam wall has a vertical segment and side wings. The dam wall can have a plurality of rounded segments integrated with a plurality of vertical segments as a unitary body. Alternatively, the dam wall has a plurality of separate vertical segments arranged in two or more overlapping rows. A plurality of conductive posts is formed over the semiconductor die. An electrical component is disposed over the semiconductor die. The semiconductor die and electrical component are disposed over a substrate. An insulating layer is formed over the substrate outside the dam wall. An underfill material is deposited between the semiconductor die and substrate. The dam wall and insulating layer inhibit the underfill material from contacting any portion of the sensitive area.

Abstract: A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect structure comprising solder; and irradiating the second die surface with a laser beam, wherein the laser beam passes through the semiconductor die and reflows the solder of the interconnect structure. In the method, laser-assisted bonding can is used to reflow solder bumps, and thermal interface material can be formed after the laser-assisted bonding.