Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna can be formed within the substrate. An encapsulant is deposited over the surface of the substrate. An ink material is deposited over the surface of the substrate. The ink material can be a curable epoxy. The ink material is formed as a straight wall, curved wall, stepped wall, stepped convex wall, and such. The ink material can be stacked with a first ink material deposited on the surface of the substrate and a second ink material deposited over the first ink material. A shielding material is disposed over the encapsulant with the ink material blocking progression of the shielding material. An electrical connector is disposed over the surface of the substrate outside the ink material to avoid contact with the shielding material.

Abstract: A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect structure comprising solder; and irradiating the second die surface with a laser beam, wherein the laser beam passes through the semiconductor die and reflows the solder of the interconnect structure. In the method, laser-assisted bonding can is used to reflow solder bumps, and thermal interface material can be formed after the laser-assisted bonding.

Abstract: A partially shielded semiconductor device and a method for forming the same are provided. The method includes: providing a semiconductor package; dispensing an ink composition to form a barrier structure on a surface of the semiconductor package, wherein the barrier structure divides the surface of the semiconductor package into at least a first portion and a second portion; dispensing a fluid including a metal precursor onto the first portion of the surface of the semiconductor package, wherein the barrier structure prevents the fluid flowing to the second portion of the surface of the semiconductor package; and curing the fluid to form an electromagnetic interference (EMI) shield.

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna can be formed within the substrate. An encapsulant is deposited over the surface of the substrate. An ink material is deposited over the surface of the substrate. The ink material can be a curable epoxy. The ink material is formed as a straight wall, curved wall, stepped wall, stepped convex wall, and such. The ink material can be stacked with a first ink material deposited on the surface of the substrate and a second ink material deposited over the first ink material. A shielding material is disposed over the encapsulant with the ink material blocking progression of the shielding material. An electrical connector is disposed over the surface of the substrate outside the ink material to avoid contact with the shielding material.

Abstract: An electronic package is provided. The electronic package includes: a substrate comprising a substrate surface, and a first set of conductive patterns and a second set of conductive patterns on the substrate surface; at least one electronic component attached on the substrate surface and electrically connected to the second set of conductive patterns; an encapsulant layer encapsulating the at least one electronic component and exposing the first set of conductive patterns; and a shielding layer formed over the encapsulant layer and not over the first set of conductive patterns, wherein the shielding layer is formed of a conductive ink cured by ultraviolet light.

Abstract: A semiconductor device has a semiconductor die with a sensitive area. A dam wall is formed over the semiconductor die proximate to the sensitive area. In one embodiment, the dam wall has a vertical segment and side wings. The dam wall can have a plurality of rounded segments integrated with a plurality of vertical segments as a unitary body. Alternatively, the dam wall has a plurality of separate vertical segments arranged in two or more overlapping rows. A plurality of conductive posts is formed over the semiconductor die. An electrical component is disposed over the semiconductor die. The semiconductor die and electrical component are disposed over a substrate. An insulating layer is formed over the substrate outside the dam wall. An underfill material is deposited between the semiconductor die and substrate. The dam wall and insulating layer inhibit the underfill material from contacting any portion of the sensitive area.

Abstract: A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect structure comprising solder; and irradiating the second die surface with a laser beam, wherein the laser beam passes through the semiconductor die and reflows the solder of the interconnect structure. In the method, laser-assisted bonding can is used to reflow solder bumps, and thermal interface material can be formed after the laser-assisted bonding.