Abstract: A three-dimensional semiconductor memory device may include a first substrate, a peripheral circuit structure on the first substrate, the peripheral circuit structure including first bonding pads in an upper portion of the peripheral circuit structure, and a cell array structure on the peripheral circuit structure. The cell array structure may include a second substrate, a stack interposed between the peripheral circuit structure and the second substrate, a first insulating layer enclosing the stack, a dummy plug penetrating the first insulating layer, a second insulating layer on the dummy plug, and second bonding pads interposed between the stack and the peripheral circuit structure and connected to the dummy plug. The first bonding pads may contact the second bonding pads, and the dummy plug may be electrically connected to the first bonding pads and the second bonding pads. A top surface of the dummy plug may contact the second insulating layer.

Abstract: A semiconductor device includes a first conductive plate structure and a second conductive plate structure, arranged at a same vertical level on a semiconductor chip and horizontally spaced apart from each other on the semiconductor chip, a first structure on the first conductive plate structure and including first separation structures and first memory blocks, and a second structure on the second conductive plate structure and including second separation structures and second memory blocks. The first memory blocks are spaced apart from each other by the first separation structures, and extend in parallel to each other in a first horizontal direction. The second memory blocks are spaced apart from each other by the second separation structures, and extend in parallel to each other in a second horizontal direction. The first and second horizontal directions are parallel to an upper surface of the first conductive plate structure, and are perpendicular to each other.

Abstract: The present invention provides a process for preparing carbon quantum dots having uniform size by using emulsion, and a process for doping the inside of the carbon structure with other element or replacing the surface with a surface stabilizer having a specific chemical functional group different from existing stabilizers in order to control the properties of the carbon quantum dots. The process for preparing the carbon quantum dots according to the present invention makes a mass production possible and the process thereof is simple. Furthermore, the process is easy to control the size of the quantum dots and the reaction yield rate of the method is excellent. In addition, according to the present invention, it is possible to synthesize carbon quantum dots having uniform size and superior quantum yield rate and it makes it possible to embody the color as equivalent to existing molecular chromophores or heavy metal quantum dots by changing the structure of the chromophore.