Abstract: A ship-centric direct communication system and an operation method thereof are proposed. The system includes a data transmission device configured to transmit, to a data reception device through a link channel, a transmission frame composed of a plurality of slots generated according to slot time, a plurality of pilots provided for channel estimation and arranged at respective specific positions in each of the plurality of slots according to a pilot transmission period, and data symbols arranged between each of the plurality of pilots, and the data reception device configured to perform channel compensation for data present between the plurality of pilots by using the plurality of pilots for each of the plurality of slots of the transmission frame when the transmission frame is received from the data transmission device and performing linear interpolation after the channel estimation in a frequency domain, and convert channel-compensated signals back into time domain symbols.

Abstract: Provided are a recombinant microorganisms having a genetic modification that increases the expression of bacterioferritin, a composition comprising the recombinant microorganism for use in reducing a nitrogen oxide concentration in a sample, and a method of reducing a nitrogen oxide concentration in a sample.

Abstract: In order to solve the problems of a conventional flat surface wave generator which has limitations on being applied to a curved structure due to more than a certain required thickness of a dielectric material, proposed are a flexible surface wave generator and system and method for surface wave communication using the same where the flexible surface wave generator is bendable by removing a third dielectric material and by making a first and a second dielectric material thin and at the same time reaches communication performance applicable to the ISM band by changing a pattern of a surface wave generation member and by forming a slit in a radiator material, so it is possible to easily establish a surface wave communication system even in environments where a conventional flat surface wave generator is difficult to be applied by being tightly attached to the surface of a metal medium with curvature.

Abstract: Disclosed is an automatic switching communication method including: obtaining LTE communication state information of a main communication module for communicating with outside through a directional antenna and a sub-communication module for communicating with the outside through a directional antenna; registering the LTE communication state information of the main communication module and the sub-communication module in a routing table; determining whether the main communication module and the sub-communication module are capable of performing LTE communication; and comparing with pre-specified communication quality coefficients of the main communication module and the sub-communication module to adjust a routing path.

Abstract: A method of reducing a concentration of a nitrogen oxide, the method comprising: contacting a microorganism with a nitrogen oxide-containing sample to reduce the concentration of the nitrogen oxide in the sample, wherein the contacting comprises contacting the microorganism with Fe(II)(L)-NOx in a bioreactor, wherein the Fe(II)(L)-NOx is a complex in which a chelating agent, Fe2+, and NOx are chelated, wherein L is the chelating agent, and wherein NOx is a nitrogen oxide ligand.

Abstract: Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by M1-xGayNz (M is at least one of Group II elements, and 0<x?1.0, 0.6?y?1.25, 0.75?z?1.5).

Abstract: Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Na1-xInyAsz (0?x<1.0, 0.8?y?1.2, 1.2?z?1.8).

Abstract: The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

Abstract: Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Mx?mAyBz (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Abstract: Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx?mAySbz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] Mx-mAyPz (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by K1-xInyPz (0?x?1.0, 0.75?y?1.25, 1.25?z?1.75).

Abstract: Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Mx?mAyBz (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Abstract: Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Na1-xInyAsz (0?x<1.0, 0.8?y?1.2, 1.2?z?1.8).

Abstract: Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx?mAySbz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by K1-xInyPz (0?x?1.0, 0.75?y?1.25, 1.25?z?1.75).

Abstract: Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by M1-xGayNz (M is at least one of Group II elements, and 0<x?1.0, 0.6?y?1.25, 0.75?z?1.5).

Abstract: Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] Mx-mAyPz (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).