Abstract: A gas sensor device (100) is configured to measure a predetermined gas of interest and comprises an enclosure (101) comprising a semiconductor substrate (102) and defining a first cavity (124), an optically transmissive second closed cavity (126) and a third cavity (128). The second cavity (126) is interposed between the first and third cavities (124, 128). The first cavity (124) comprises an inlet port (130) for receiving a gas under test, an outlet port (132) for venting the gas under test. The first cavity (124) also comprises an optical source (112) and a measurement sensor (114). The second cavity (126) is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (126), and the third cavity (128) comprises a reference measurement sensor (116) disposed therein.

Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

Abstract: A gas sensor device (100) is configured to measure a predetermined gas of interest and comprises an enclosure (101) comprising a semiconductor substrate (102) and defining a first cavity (124), an optically transmissive second closed cavity (126) and a third cavity (128). The second cavity (126) is interposed between the first and third cavities (124, 128). The first cavity (124) comprises an inlet port (130) for receiving a gas under test, an outlet port (132) for venting the gas under test. The first cavity (124) also comprises an optical source (112) and a measurement sensor (114). The second cavity (126) is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (126), and the third cavity (128) comprises a reference measurement sensor (116) disposed therein.

Abstract: A sensor device (100) comprises an emitter device (106) arranged to emit electromagnetic radiation and having an emission region associated therewith. The sensor device (100) also comprises a detector device (108) arranged to receive electromagnetic radiation and having a detection region associated therewith, and an optical system (122). The emission region is spaced at a predetermined distance from the detection region. The optical system (122) defines a plurality of principal rays, a number of the plurality of principal rays intersecting the detection region. The number of the plurality of principal rays also intersect the emission region.

Abstract: A detecting device includes a detecting part configured to detect a change in an object to be detected so as to output a detection signal, an amplifying part configured to amplify the detection signal output from the detecting part to output a first amplification signal, a reference voltage supply part configured to supply a reference voltage to the amplifying part, the reference voltage being input to the amplifying part to be output as a second amplification signal, a switching part configured to switch a connection between the detecting part and the amplifying part or a connection between the amplifying part and the reference voltage supply part based on a control signal input thereto, and a comparing part configured to compare a predetermined amplification factor in the amplifying part, with an amplification factor obtained from the second amplification signal so as to output the comparison result as a comparison signal.

Abstract: A stress sensor (1) for detecting mechanical stress in a semiconductor chip (2) has a Wheatstone bridge formed by four integrated resistors R1 to R4, the resistors R1 and R4 being p-type resistors and the resistors R2 and R3 being n-type resistors.

Abstract: A detecting device includes a detecting part configured to detect a change in an object to be detected so as to output a detection signal, an amplifying part configured to amplify the detection signal output from the detecting part to output a first amplification signal, a reference voltage supply part configured to supply a reference voltage to the amplifying part, the reference voltage being input to the amplifying part to be output as a second amplification signal, a switching part configured to switch a connection between the detecting part and the amplifying part or a connection between the amplifying part and the reference voltage supply part based on a control signal input thereto, and a comparing part configured to compare a predetermined amplification factor in the amplifying part, with an amplification factor obtained from the second amplification signal so as to output the comparison result as a comparison signal.

Abstract: A stress sensor (1) for detecting mechanical stress in a semiconductor chip (2) has a Wheatstone bridge formed by four integrated resistors R1 to R4, the resistors R1 and R4 being p-type resistors and the resistors R2 and R3 being n-type resistors.