Patents by Inventor Writam Banerjee

Writam Banerjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile resistive memory device and manufacturing method thereof
    Patent number: 11101321
    Abstract: A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer under an applied electric field.
    Type: Grant
    Filed: September 6, 2015
    Date of Patent: August 24, 2021
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Writam Banerjee, Ming Liu, Qi Liu, Hangbing Lv, Haitao Sun, Kangwei Zhang
  • Manufacturing method for a nonvolatile resistive switching memory device
    Patent number: 10312439
    Abstract: A nonvolatile resistive switching memory includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene intercalation layer with nanopores, interposed between the easily oxidizable metal electrode and the resistive switching functional layer, is capable of controlling the metal ions, which are formed by the oxidation of the easily oxidizable metal electrode during the programming of the device, and only enter into the resistive switching functional layer through the position of the nanopores. Further, the graphene intercalation layer with nanopores is capable of blocking the diffusion of the metal ions, making the metal ions, which are formed after the oxidation of the easily oxidizable metal electrode, enter into the resistive switching functional layer only through the position of the nanopores during the programming of the device, thereby controlling the growing position of conductive filament.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: June 4, 2019
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Qi Liu, Ming Liu, Haltao Sun, Hangbing Lv, Shibing Long, Writam Banerjee, Kangwei Zhang
  • Nonvolatile resistive switching memory device and manufacturing method thereof
    Patent number: 10134983
    Abstract: A nonvolatile resistive switching memory, comprising an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode, and characterized in that: a graphene barrier layer is inserted between the inert metal electrode and the resistive switching functional layer, which is capable of preventing the easily oxidizable metal ions from migrating into the inert metal electrode through the resistive switching functional layer under the action of electric field during the programming of the device.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: November 20, 2018
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Qi Liu, Ming Liu, Haitao Sun, Keke Zhang, Shibing Long, Hangbing Lv, Writam Banerjee, Kangwei Zhang
  • Nonvolatile Resistive Memory Device and Manufacturing Method Thereof
    Publication number: 20180122856
    Abstract: A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer under an applied electric field.
    Type: Application
    Filed: September 6, 2015
    Publication date: May 3, 2018
    Inventors: WRITAM BANERJEE, MING LIU, QI LIU, HANGBING LV, HAITAO SUN, KANGWEI ZHANG
  • NONVOLATILE RESISTIVE SWITCHING MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180026183
    Abstract: A nonvolatile resistive switching memory, comprising an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode, and characterized in that: a graphene barrier layer is inserted between the inert metal electrode and the resistive switching functional layer, which is capable of preventing the easily oxidizable metal ions from migrating into the inert metal electrode through the resistive switching functional layer under the action of electric field during the programming of the device.
    Type: Application
    Filed: May 14, 2015
    Publication date: January 25, 2018
    Inventors: Qi Liu, Ming Liu, Haitao Sun, Keke Zhang, Shibing Long, Hangbing Lv, Writam Banerjee, Kangwei Zhang
  • NONVOLATILE RESISTIVE SWITCHING MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180019393
    Abstract: A nonvolatile resistive switching memory includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene intercalation layer with nanopores, interposed between the easily oxidizable metal electrode and the resistive switching functional layer, is capable of controlling the metal ions, which are formed by the oxidation of the easily oxidizable metal electrode during the programming of the device, and only enter into the resistive switching functional layer through the position of the nanopores. Further, the graphene intercalation layer with nanopores is capable of blocking the diffusion of the metal ions, making the metal ions, which are formed after the oxidation of the easily oxidizable metal electrode, enter into the resistive switching functional layer only through the position of the nanopores during the programming of the device, thereby controlling the growing position of conductive filament.
    Type: Application
    Filed: May 14, 2015
    Publication date: January 18, 2018
    Applicant: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Qi Liu, Ming Liu, Haltao Sun, Hangbing Lv, Shibing Long, Writam Banerjee, Kangwei Zhang