Patents by Inventor Wu-Der Weng

Wu-Der Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monitoring plasma induced damage during semiconductor wafer processes
    Patent number: 8193824
    Abstract: A plasma damage detection test structure is disclosed. The plasma damage detection test structure includes a first antenna, a voltage source, a ground reference, a first transistor comprising a first source, a first gate, and a first drain. The plasma damage detection test structure further includes a second transistor comprising a second source, a second gate, and a second drain. The first gate is conductively coupled to said first antenna, said first drain and said second drain are conductively coupled to said voltage source, and said first source and said second source are conductively coupled to said ground reference. In various embodiments multiple antennas may be used. The antennas may be multiple configurations, such as a symmetric arrangement or asymmetric arrangement. In various embodiments, multiple transistors in parallel or cross-couple arrangements may be used.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: June 5, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wu-Der Weng, Ji-Shyang Nieh
  • Monitoring Plasma Induced Damage During Semiconductor Wafer Processes
    Publication number: 20090281745
    Abstract: A plasma damage detection test structure is disclosed. The plasma damage detection test structure includes a first antenna, a voltage source, a ground reference, a first transistor comprising a first source, a first gate, and a first drain. The plasma damage detection test structure further includes a second transistor comprising a second source, a second gate, and a second drain. The first gate is conductively coupled to said first antenna, said first drain and said second drain are conductively coupled to said voltage source, and said first source and said second source are conductively coupled to said ground reference. In various embodiments multiple antennas may be used. The antennas may be multiple configurations, such as a symmetric arrangement or asymmetric arrangement. In various embodiments, multiple transistors in parallel or cross-couple arrangements may be used.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 12, 2009
    Inventors: Wu Der Weng, Ji-Shyang Nieh