Patents by Inventor Wu-Guan Ping

Wu-Guan Ping has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Darc layer for MIM process integration
    Patent number: 6576526
    Abstract: A new processing sequence is provided for the creation of a MIM capacitor. The process starts with the deposition of a first layer of metal. Next are deposited listed, a thin layer of metal, a layer of insulation, a second layer of metal and a layer of Anti Reflective Coating. An etch is then performed to form the second electrode of the MIM capacitor (using the etch stop layer to stop this etch), MIM spacers are formed on the sidewalls of the second electrode of the MIM capacitor (also using the etch stop layer to stop this etch). The dielectric and first electrode of the MIM capacitor are formed by etching through the second layer of insulation and the first layer of metal. This is followed by conventional processing to create contact points to the MIM capacitor.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: June 10, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Shao Kai, Wu-Guan Ping, Chen Liang, Cheng-Wei Hua, Sanford Chu, Daniel Yen
  • Darc layer for MIM process integration
    Publication number: 20030008467
    Abstract: A new processing sequence is provided for the creation of a MIM capacitor. The process starts with the deposition of a first layer of metal. Next are deposited listed, a thin layer of metal, a layer of insulation, a second layer of metal and a layer of Anti Reflective Coating. An etch is then performed to form the second electrode of the MIM capacitor (using the etch stop layer to stop this etch), MIM spacers are formed on the sidewalls of the second electrode of the MIM capacitor (also using the etch stop layer to stop this etch). The dielectric and first electrode of the MIM capacitor are formed by etching through the second layer of insulation and the first layer of metal. This is followed by conventional processing to create contact points to the MIM capacitor.
    Type: Application
    Filed: July 9, 2001
    Publication date: January 9, 2003
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Shao Kai, Wu-Guan Ping, Chen Liang, Cheng-Wei Hua, Sanford Chu, Daniel Yen