Patents by Inventor Wu-Hsi Lu

Wu-Hsi Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10680120
    Abstract: A semiconductor device includes a substrate, a well region formed in the substrate, first and second isolation regions formed in the substrate, a dielectric layer formed on the well region, a conductive layer formed on the dielectric layer, a first doped region, an insulating layer, and first and second contact vias. The dielectric layer is disposed between the first and second isolation regions. The first doped region is formed in the well region. The insulating layer is formed on the dielectric layer, the first and second isolation regions, and the first doped region. The first contact via is formed in the insulating layer and electrically connected to the conductive layer. The first contact via is disposed on an overlapping area between the dielectric layer and the conductive layer. The second contact via is formed in the insulating layer and electrically connected to the doped region.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: June 9, 2020
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Ching-Yi Hsu, Shih-Hao Liu, Wu-Hsi Lu, Yun-Chou Wei, Chih-Cherng Liao
  • Patent number: 10572070
    Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: February 25, 2020
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chih-Cherng Liao, Shih-Hao Liu, Wu-Hsi Lu, Ming-Cheng Lo, Chung-Ren Lao, Yun-Chou Wei, Yin Chen, Hsin-Hui Lee, Hsueh-Jung Lin, Wen-Chih Lu, Ting-Jung Lu
  • Publication number: 20190391701
    Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 26, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Cherng LIAO, Shih-Hao LIU, Wu-Hsi LU, Ming-Cheng LO, Chung-Ren LAO, Yun-Chou WEI, Yin CHEN, Hsin-Hui LEE, Hsueh-Jung LIN, Wen-Chih LU, Ting-Jung LU
  • Publication number: 20190312154
    Abstract: A semiconductor device includes a substrate, a well region formed in the substrate, first and second isolation regions formed in the substrate, a dielectric layer formed on the well region, a conductive layer formed on the dielectric layer, a first doped region, an insulating layer, and first and second contact vias. The dielectric layer is disposed between the first and second isolation regions. The first doped region is formed in the well region. The insulating layer is formed on the dielectric layer, the first and second isolation regions, and the first doped region. The first contact via is formed in the insulating layer and electrically connected to the conductive layer. The first contact via is disposed on an overlapping area between the dielectric layer and the conductive layer. The second contact via is formed in the insulating layer and electrically connected to the doped region.
    Type: Application
    Filed: April 5, 2018
    Publication date: October 10, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Ching-Yi HSU, Shih-Hao LIU, Wu-Hsi LU, Yun-Chou WEI, Chih-Cherng LIAO
  • Patent number: 10395085
    Abstract: Embodiments of the disclosure relate to a semiconductor device. The semiconductor device includes a semiconductor substrate, a first metal wiring layer disposed on the semiconductor substrate, an interlayer dielectric layer (ILD) disposed on the first metal wiring layer, a second metal wiring layer disposed on the interlayer dielectric layer, and a first via and a second via disposed in the interlayer dielectric layer. The second via is on the first via, and there is not any metal wiring layer in the interlayer dielectric layer.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: August 27, 2019
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Shih-Hao Liu, Leuh Fang, Chih-Cherng Liao, Yun-Chou Wei, Chung-Ren Lao, Wu-Hsi Lu
  • Publication number: 20190171857
    Abstract: Embodiments of the disclosure relate to a semiconductor device. The semiconductor device includes a semiconductor substrate, a first metal wiring layer disposed on the semiconductor substrate, an interlayer dielectric layer (ILD) disposed on the first metal wiring layer, a second metal wiring layer disposed on the interlayer dielectric layer, and a first via and a second via disposed in the interlayer dielectric layer. The second via is on the first via, and there is not any metal wiring layer in the interlayer dielectric layer.
    Type: Application
    Filed: December 5, 2017
    Publication date: June 6, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Shih-Hao LIU, Leuh Fang, Chih-Cherng Liao, Yun-Chou Wei, Chung-Ren Lao, Wu-Hsi Lu