Patents by Inventor Wu Hung Ko
Wu Hung Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230367206Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.Type: ApplicationFiled: July 28, 2023Publication date: November 16, 2023Inventors: WU-HUNG KO, CHUNG-HUNG LIN, CHIH-WEI WEN
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Patent number: 11809076Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.Type: GrantFiled: May 27, 2022Date of Patent: November 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wu-Hung Ko, Chung-Hung Lin, Chih-Wei Wen
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Patent number: 11703752Abstract: A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.Type: GrantFiled: March 25, 2021Date of Patent: July 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wu-Hung Ko, Kun-Lung Hsieh, Chih-Wei Wen
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Publication number: 20220291580Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.Type: ApplicationFiled: May 27, 2022Publication date: September 15, 2022Inventors: WU-HUNG KO, CHUNG-HUNG LIN, CHIH-WEI WEN
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Patent number: 11347143Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.Type: GrantFiled: July 30, 2020Date of Patent: May 31, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Wu-Hung Ko, Chung-Hung Lin, Chih-Wei Wen
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Publication number: 20210216007Abstract: A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.Type: ApplicationFiled: March 25, 2021Publication date: July 15, 2021Inventors: Wu-Hung KO, Kun-Lung HSIEH, Chih-Wei WEN
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Patent number: 10983430Abstract: A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.Type: GrantFiled: February 22, 2018Date of Patent: April 20, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wu-Hung Ko, Chih-Wei Wen, Kun-Lung Hsieh
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Publication number: 20210096460Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.Type: ApplicationFiled: July 30, 2020Publication date: April 1, 2021Inventors: WU-HUNG KO, CHUNG-HUNG LIN, CHIH-WEI WEN
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Publication number: 20200124994Abstract: The present disclosure provides a method of treating a mask for photolithography. The method includes disposing the mask on a stage in a tool. The mask includes a pellicle and a substrate. The method further includes providing oxygen gas in a space between the pellicle and the substrate, and splitting the oxygen gas in the space to form an oxygen atom or an ozone molecule. The method further includes exposing surfaces of the pellicle and the substrate to the oxygen atom or the ozone molecule for a predetermined duration. A mask treating system is also provided.Type: ApplicationFiled: October 23, 2018Publication date: April 23, 2020Inventors: WU-HUNG KO, CHUNG-HUNG LIN, CHIH-WEI WEN
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Publication number: 20190258155Abstract: A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.Type: ApplicationFiled: February 22, 2018Publication date: August 22, 2019Inventors: Wu-Hung KO, Chih-Wei WEN, Kun-Lung HSIEH
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Patent number: 9726990Abstract: Lithography mask repair methods are disclosed. In one embodiment, a method of repairing a lithography mask includes providing a lithography mask, exposing a back side of the lithography mask to vacuum ultraviolet (VUV) energy, and cleaning the lithography mask.Type: GrantFiled: March 1, 2013Date of Patent: August 8, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wu Hung Ko, Kun-Lung Hsieh
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Patent number: 8703364Abstract: A method for repairing a defect, such as a pinhole, on a photomask is described. In an example, a laser beam is used to form a matrix of laser burn spots in a substrate of the photomask proximate a defect, such as a pinhole, of the photomask. Each laser burn spot is formed at a focal point of the laser beam inside the substrate by melting a material of the substrate proximate to the defect. In an example, the defect is surrounded and covered by the matrix of laser burn spots. The matrix of laser burn spots can attenuate or block light from passing through the defect, such as the pinhole. The matrix of laser burn spots may repair the defect of the photomask without removing a pellicle and pellicle frame mounted on the photomask.Type: GrantFiled: May 7, 2012Date of Patent: April 22, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kun-Lung Hsieh, Chung-Hung Lin, Min-An Yang, Chih Wei Wen, Wu Hung Ko
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Publication number: 20130295494Abstract: A method for repairing a defect, such as a pinhole, on a photomask is described. In an example, a laser beam is used to form a matrix of laser burn spots in a substrate of the photomask proximate a defect, such as a pinhole, of the photomask. Each laser burn spot is formed at a focal point of the laser beam inside the substrate by melting a material of the substrate proximate to the defect. In an example, the defect is surrounded and covered by the matrix of laser burn spots. The matrix of laser burn spots can attenuate or block light from passing through the defect, such as the pinhole. The matrix of laser burn spots may repair the defect of the photomask without removing a pellicle and pellicle frame mounted on the photomask.Type: ApplicationFiled: May 7, 2012Publication date: November 7, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kun-Lung Hsieh, Chung-Hung Lin, Min-An Yang, Chih Wei Wen, Wu Hung Ko
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Patent number: 7097948Abstract: The present invention relates to a method for removing etching assist gas from a fabrication system used during defect repair of a photomask in the fabrication of an integrated circuit, including: (a) inspecting the photomask and detecting a defect, the defect in a defect region; and (b) repairing the defect, wherein an amount, effective for the purpose of styrene is added to the system. By the method of the present invention, the amount of gas remaining on the MOS film is reduced, resulting in less surface defects present on the photomask.Type: GrantFiled: August 29, 2003Date of Patent: August 29, 2006Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wu Hung Ko, Tung Yaw Kang, Chih Wei Wen