Abstract: An array substrate for a liquid crystal display device includes a first storage capacitor and a second storage capacitor for increased capacitance. The first storage capacitor is formed by a first common electrode and a pixel electrode. The second storage capacitor is formed by a second common electrode and the pixel electrode.

Abstract: A display apparatus includes a light permeable substrate, dummy pixels, a peripheral wiring layer and a display element layer. The dummy pixels are disposed on the light permeable substrate. Each of the dummy pixels includes a dummy pattern controlling layer. The peripheral wiring layer is disposed on the light permeable substrate for applying voltages having the same polarity to the dummy pattern controlling layers. The display element layer covers the light permeable substrate and the dummy pixels. The peripheral wiring layer and the dummy pattern controlling layer are spaced apart by a gap. The gap allows light to be reflected from the display element layer to the light permeable substrate.

Abstract: A method of manufacturing a pixel structure includes: forming a source, a drain and a first capacitor electrode; forming a semiconductor layer in contact with a portion of the source and a portion of the drain; forming a gate and a second capacitor electrode, and the second capacitor electrode substantially aligned with the first capacitor electrode; forming a gate insulating layer between the semiconductor layer, the source, the drain and the first capacitor electrode, and the gate and the second capacitor electrode; forming a passivation layer over the source, the drain, the first capacitor electrode, the semiconductor layer, the gate and the second capacitor electrode; and forming a pixel electrode over the passivation layer, and the pixel electrode substantially aligned with the first capacitor electrode.

Abstract: A display is disclosed. The display includes a display panel including pixel units in an image-displaying region. Each of the pixel units includes an AND gate and a pixel electrode electrically connected to an output terminal of the AND gate.

Abstract: A method of manufacturing a pixel structure includes: forming a source, a drain and a first capacitor electrode; forming a semiconductor layer in contact with a portion of the source and a portion of the drain; forming a gate and a second capacitor electrode, and the second capacitor electrode substantially aligned with the first capacitor electrode; forming a gate insulating layer between the semiconductor layer, the source, the drain and the first capacitor electrode, and the gate and the second capacitor electrode; forming a passivation layer over the source, the drain, the first capacitor electrode, the semiconductor layer, the gate and the second capacitor electrode; and forming a pixel electrode over the passivation layer, and the pixel electrode substantially aligned with the first capacitor electrode.

Abstract: A display apparatus includes a light permeable substrate, dummy pixels, a peripheral wiring layer and a display element layer. The dummy pixels are disposed on the light permeable substrate. Each of the dummy pixels includes a dummy pattern controlling layer. The peripheral wiring layer is disposed on the light permeable substrate for applying voltages having the same polarity to the dummy pattern controlling layers. The display element layer covers the light permeable substrate and the dummy pixels. The peripheral wiring layer and the dummy pattern controlling layer are spaced apart by a gap. The gap allows light to be reflected from the display element layer to the light permeable substrate.

Abstract: A manufacturing method of pixel structure includes forming a first conductive layer on a substrate and forming a first insulation layer thereon; forming a second conductive layer on the first insulation layer; forming a second insulation layer on the second conductive layer; forming a semiconductor layer on the second insulation layer above the gate; forming a third conductive layer on the second insulation layer, wherein the gate, the semiconductor layer, the source, and the drain together constitute a thin film transistor, and the first electrode, the second electrode, and the third electrode together constitute a capacitor; forming a third insulation layer on the third conductive layer; and forming a pixel electrode on the third insulation layer, the pixel electrode being electrically connected to the drain.

Abstract: A display is disclosed. The display includes a display panel including pixel units in an image-displaying region. Each of the pixel units includes an AND gate and a pixel electrode electrically connected to an output terminal of the AND gate.

Abstract: An array substrate for a liquid crystal display device includes a first storage capacitor and a second storage capacitor for increased capacitance. The first storage capacitor is formed by a first common electrode and a pixel electrode. The second storage capacitor is formed by a second common electrode and the pixel electrode.

Abstract: A display panel having a display region and a non-display region is provided. The display panel includes a plurality of pixel structures in the display region, and each pixel structure includes a scan line, a data line, a first active device, a pixel electrode, a first insulating layer, a capacitor electrode, and a second insulating layer. The first active device includes a first gate, a first channel, a first source, and a first drain. The second insulating layer covers the first insulating layer and the capacitor electrode and is located between the capacitor electrode and the first drain. At least one driving circuit is disposed in the non-display region and includes at least one second active device. Hence, a relatively thin insulating layer can be disposed between the capacitor electrode and the drain to reduce the area of the capacitor region and to achieve a desired aperture ratio.

Abstract: A manufacturing method of pixel structure includes forming a first conductive layer on a substrate and forming a first insulation layer thereon; forming a second conductive layer on the first insulation layer; forming a second insulation layer on the second conductive layer; forming a semiconductor layer on the second insulation layer above the gate; forming a third conductive layer on the second insulation layer, wherein the gate, the semiconductor layer, the source, and the drain together constitute a thin film transistor, and the first electrode, the second electrode, and the third electrode together constitute a capacitor; forming a third insulation layer on the third conductive layer; and forming a pixel electrode on the third insulation layer, the pixel electrode being electrically connected to the drain.

Abstract: A pixel structure includes a first electrode on a substrate, a first insulation layer covering the first electrode, a gate located on the first insulation layer, a second electrode located on the first insulation layer above the first electrode, a second insulation layer covering the gate and the second electrode, a semiconductor layer located on the second insulation layer above the gate, a source and a drain that are located on the semiconductor layer, a third electrode, a third insulation layer, and a pixel electrode. The third electrode is located on the second insulation layer above the second electrode and electrically connected to the first electrode. The third insulation layer covers the source, the drain, and the third electrode. The pixel electrode is located on the third insulation layer and electrically connected to the drain.

Abstract: A pixel structure includes a first electrode on a substrate, a first insulation layer covering the first electrode, a gate located on the first insulation layer, a second electrode located on the first insulation layer above the first electrode, a second insulation layer covering the gate and the second electrode, a semiconductor layer located on the second insulation layer above the gate, a source and a drain that are located on the semiconductor layer, a third electrode, a third insulation layer, and a pixel electrode. The third electrode is located on the second insulation layer above the second electrode and electrically connected to the first electrode. The third insulation layer covers the source, the drain, and the third electrode. The pixel electrode is located on the third insulation layer and electrically connected to the drain.

Abstract: A thin film transistor device, disposed on a substrate, includes a gate electrode, a semiconductor channel layer, a gate insulating layer disposed between the gate electrode and the semiconductor channel layer, a source electrode and a drain electrode disposed at two opposite sides of the semiconductor channel layer and partially overlapping the semiconductor channel layer, respectively, a capacitor electrode at least partially overlapping the gate electrode, and a capacitor dielectric layer disposed between the capacitor electrode and the gate electrode. The capacitor electrode, the gate electrode and the capacitor dielectric layer form a capacitor device.

Abstract: A liquid crystal display is provided. The liquid crystal display having a plurality of pixel regions includes a first substrate, a second substrate and a liquid crystal layer. The second substrate has a patterned electrode layer having a plurality of complete coverage regions and at least one slit distribution region. Each of the complete coverage regions is located in a corresponding pixel region. The liquid crystal layer is disposed between the first substrate and the second substrate. Liquid crystal molecules of the liquid crystal layer have various slanting directions, and each of the complete coverage regions is located at a slanting center of the slanting directions of the liquid crystal molecules. The slit distribution region is used for stabilizing the slanting directions of liquid crystal molecules within the liquid crystal layer.

Abstract: An active device, a pixel structure, and a display panel are provided. The pixel structure includes a scan line, a data line, an active device, a first insulating layer, a pixel electrode, a capacitor electrode, and a second insulating layer. The active device includes a gate, a channel, a source, and a drain. The gate is electrically connected to the scan line. The source is electrically connected to the data line. The first insulating layer is disposed between the gate and the channel. The pixel electrode is electrically connected to the drain. The capacitor electrode is located on the first insulating layer. The second insulating layer is located between the capacitor electrode and the drain.

Abstract: A liquid crystal display is provided. The liquid crystal display having a plurality of pixel regions includes a first substrate, a second substrate and a liquid crystal layer. The second substrate has a patterned electrode layer having a plurality of complete coverage regions and at least one slit distribution region. Each of the complete coverage regions is located in a corresponding pixel region. The liquid crystal layer is disposed between the first substrate and the second substrate. Liquid crystal molecules of the liquid crystal layer have various slanting directions, and each of the complete coverage regions is located at a slanting center of the slanting directions of the liquid crystal molecules. The slit distribution region is used for stabilizing the slanting directions of liquid crystal molecules within the liquid crystal layer.