Abstract: The present application provides a processing method of a metal composite structure including a first metal layer and a second metal layer stacked on the first metal layer. The processing method includes the steps of defining a first through hole in the first metal layer, and drilling in the first through hole toward the second metal layer to form a traction hole in the second metal layer. Then, hot melt drilling is performed on a surface of the second metal layer away from the first metal layer toward the first through hole, thereby causing the second metal layer to crack under a traction force of the traction hole to form a second through hole, and a portion of the second metal layer to be melted and squeezed to form a bushing which adheres to at least a portion of a sidewall of the first through hole.

Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.

Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.

Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.

Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure. The gate structure includes a gate electrode over a gate dielectric, the gate dielectric having a bottom surface in a first plane. A second etch interacts with a first composition and an initial dopant to remove a bottom portion of a first sidewall spacer adjacent the gate structure, such that a bottom surface of the first sidewall spacer lies in a second plane different than the first plane. The removal of the bottom portion of the first sidewall spacer reduces a first distance between a source or drain and a bottom surface of the gate electrode, thus reducing proximity loading of the semiconductor device and improving functionality of the semiconductor device.

Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure. The gate structure includes a gate electrode over a gate dielectric, the gate dielectric having a bottom surface in a first plane. A second etch interacts with a first composition and an initial dopant to remove a bottom portion of a first sidewall spacer adjacent the gate structure, such that a bottom surface of the first sidewall spacer lies in a second plane different than the first plane. The removal of the bottom portion of the first sidewall spacer reduces a first distance between a source or drain and a bottom surface of the gate electrode, thus reducing proximity loading of the semiconductor device and improving functionality of the semiconductor device.

Abstract: A monitor includes a microprocessor, a switch control unit, and a switch detecting unit receiving a system voltage and sending the system voltage to the microprocessor. When the microprocessor detects the presence of the system voltage, and the microprocessor outputs a first control signal to the switch control unit, to control the monitor to be turned on. When the microprocessor detects the system voltage not being present, and the microprocessor outputs a second control signal to the switch control unit, to control the monitor to be turned off.

Abstract: A monitor includes a microprocessor, a switch control unit, and a switch detecting unit receiving a system voltage and sending the system voltage to the microprocessor. When the microprocessor detects the presence of the system voltage, and the microprocessor outputs a first control signal to the switch control unit, to control the monitor to be turned on. When the microprocessor detects the system voltage not being present, and the microprocessor outputs a second control signal to the switch control unit, to control the monitor to be turned off.

Abstract: A charging device for charging an electric bicycle includes a charger which is received in the trunk of a vehicle and electrically connected to the battery of the vehicle by a conductive wire. A wire extends from the charger and is detachably connected to the rechargeable battery of the electric bicycle which can be received in the trunk or carried on the vehicle by a bicycle carrier attached to the vehicle. The conductive wire has the first end connected to the charger and the second end having an adapter which is received in the cigarette lighter receptacle hole of the vehicle.

Abstract: The present invention provides a method for producing double-card anti-counterfeit marks with interlock protection based on the technique which combines nuclear technology with computer-generated hologram (CGH) technology and inspecting apparatus for the mark. The invention relates to the technical field of optical information processing in physics. The technical feature of the invention is to insert potential images R,T and matched potential images R',T' in the anti-counterfeit identification marks and in the inspecting identification marks respectively by means of charged particle track image in sampling coincidence with CGH. When R coincides with R', a certain message of genuineness for an identification mark will be shown, and when T coincides with T', different specific information in thousands of ways appears to prove the genuineness of the protected objects.