Patents by Inventor Wu Meng Yu

Wu Meng Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MRAM fabrication and device
    Patent number: 11864467
    Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
  • MRAM Fabrication and Device
    Publication number: 20230389438
    Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
  • MRAM Fabrication and Device
    Publication number: 20210391534
    Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
    Type: Application
    Filed: August 30, 2021
    Publication date: December 16, 2021
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
  • MRAM fabrication and device
    Patent number: 11107980
    Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
  • Methods to improve magnetic tunnel junction memory cells by treating native oxide
    Patent number: 10991876
    Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee
  • METHODS TO IMPROVE MAGNETIC TUNNEL JUNCTION MEMORY CELLS
    Publication number: 20200136027
    Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.
    Type: Application
    Filed: October 31, 2018
    Publication date: April 30, 2020
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee
  • MRAM FABRICATION AND DEVICE
    Publication number: 20200106009
    Abstract: A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
    Type: Application
    Filed: September 3, 2019
    Publication date: April 2, 2020
    Inventors: Jung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien