Abstract: A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direction. A method for fabricating the semiconductor device is also disclosed.

Abstract: A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direction. A method for fabricating the semiconductor device is also disclosed.

Abstract: A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH4). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.

Abstract: A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH4). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.