Abstract: A photo resist composition contains a polymer resin, a first photo acid generator (PAG) requiring a first dose of actinic energy to generate a first photo acid, and a photo base generator (PBG) requiring a second dose of actinic energy, different from the first dose, to generate a photo base. The amounts and types of components in the photo resist are selected to produce a hybrid resist image. Either the first photo acid or photo base acts as a catalyst for a chemical transformation in the resist to induce a solubility change. The other compound is formulated in material type and loading in the resist such that it acts as a quenching agent. The catalyst is formed at low doses to induce the solubility change and the quenching agent is formed at higher doses to counterbalance the presence of the catalyst. Accordingly, the same frequency doubling effect of conventional hybrid resist compositions may be obtained, however, either a line or a space may be formed at the edge of an aerial image.

Abstract: The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

Abstract: Photoresist compositions are provided comprising 1) a resin binder having photoacid-labile groups, 2) an acid generator and 3) a photospeed control agent. Photoresists of the invention exhibit good photospeed and can provide highly resolved relief images of small dimensions, including lines of sub-micron and sub-half micron dimensions with at least essentially vertical side walls. Methods are also provided that include control of photospeed of a photoresist composition of the invention.

Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

Abstract: Improved resolution of lithographic patterns can be obtained using a double exposure process where a resist layer is subjected to a patternwise first exposure followed by a blanket second exposure. The resist composition preferably contains a chemically amplified resist which undergoes significant shrinkage on exposure to radiation, a chemically amplified resist which contains a photo-bleachable component, or a chemically amplified resist which contains a chemical-bleachable component.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.

Abstract: A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid.

Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

Abstract: The present invention relates to chemically amplified resists and resist systems wherein some of the polar functional groups of the aqueous base soluble polymer or copolymers are protected with a cyclic aliphatic ketal protecting group such as methoxycyclohexanyl. The resists and the resist systems of the present invention containing the new protecting group have improved shelf-life and vacuum stability as compared to the prior art resists. Thus, the resists of the present invention are highly useful in e-beam lithographic applications.

Abstract: The present invention relates to chemically amplified resists and resist systems wherein some of the polar functional groups of the aqueous base soluble polymer or copolymers are protected with a cyclic aliphatic ketal protecting group such as methoxycyclohexanyl. The resists and the resist systems of the present invention containing the new protecting group have improved shelf-life and vacuum stability as compared to the prior art resists. Thus, the resists of the present invention are highly useful in e-beam lithographic applications.

Abstract: Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: Acid sensitive polymeric compositions, and improved chemically amplified microlithographic resist compositions comprising the acid sensitive polymeric compositions, and methods for the preparation and use thereof are disclosed. The compositions comprise, in admixture, a polymeric binder, an acid labile moiety which provides selective aqueous base solubility upon cleavage, and a compound that generates acid upon exposure of the resist composition to imaging radiation. More particularly, the compositions have one or more acid labile ketal groups, which may be chemically linked to a polymeric resin or which may be incorporated into a separate component to form a dissolution inhibitor. Crosslinking of the polymer to produce a high molecular weight, nonpolar resin may also occur by ketal exchange. Upon exposure, molecular weight and polarity changes of the crosslinked resin produce high contrast during development.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: A process for fabricating a printed circuit board concerns the use of a soluble, air-stable conducting polymer applied to plated through holes, blind holes or vias or to a predetermined portion of the printed circuit board surface for selectively metal plating on the polymer without the necessity of either an electroless plating bath or the use of precious metal seeds. A preferred conducting polymer is polyaniline. A preferred metal plating is preferably copper or a noble metal such as palladium or silver.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectivly doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: An improved solder/polymer fluxless composite paste interconnection material having a low reflow temperature to form electrical contacts having good bonding strength and low contact resistance. The present pastes comprise a major proportion of a meltable metal alloy powder filler, free of noble metals and preferably free of lead, a minor proportion of a solution of a temperature-stable thermoplastic polymer having a softening temperature above the melting temperature of the metal powder filler in a volatile solvent which evaporates during reflow, and a minor proportion of a fluxing agent having a boiling point lower than the reflow temperature of the composition and higher than the melting point of the eutectic alloy powder filler. An oxide-free, partially coalesced metal alloy connection is obtained, which is polymer strengthened and reworkable at a low reflow temperature, per se, or in the presence of polymer solvent.