Patents by Inventor Wu-Song S. Huang
Wu-Song S. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9726977Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.Type: GrantFiled: February 8, 2010Date of Patent: August 8, 2017Assignee: GlobalFoundries Inc.Inventors: James F. Cameron, Jin Wuk Sung, John P. Amara, Greogory P. Prokopowicz, David A. Valeri, Libor Vyklicky, Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi, Irene Y. Popova
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Patent number: 8932796Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.Type: GrantFiled: November 10, 2011Date of Patent: January 13, 2015Assignee: International Business Machines CorporationInventors: Kuang-Jung Chen, Wu-Song S. Huang, Sen Liu, Steven J. Holmes, Gregory Breyta
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Publication number: 20130122421Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.Type: ApplicationFiled: November 10, 2011Publication date: May 16, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kuang-Jung Chen, Wu-Song S. Huang, Sen Liu, Steven J. Holmes, Gregory Breyta
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Patent number: 7944055Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: GrantFiled: May 3, 2010Date of Patent: May 17, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Publication number: 20100297557Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.Type: ApplicationFiled: February 8, 2010Publication date: November 25, 2010Applicant: Rohm and Haas Electronic Materials LLCInventors: James F. Cameron, Jin Wuk Sung, John P. Amara, Greogory P. Prokopowicz, David A. Valeri, Libor Vyklicky, Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi, Irene Y. Popova
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Patent number: 7816068Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: October 26, 2007Date of Patent: October 19, 2010Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Patent number: 7807332Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: April 18, 2008Date of Patent: October 5, 2010Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Publication number: 20100207276Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: ApplicationFiled: May 3, 2010Publication date: August 19, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Patent number: 7754820Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.Type: GrantFiled: July 21, 2008Date of Patent: July 13, 2010Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi
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Patent number: 7709370Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: GrantFiled: September 20, 2007Date of Patent: May 4, 2010Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Patent number: 7659050Abstract: Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.Type: GrantFiled: June 7, 2005Date of Patent: February 9, 2010Assignee: International Business Machines CorporationInventors: James J. Bucchignano, Wu-Song S. Huang, David P. Klaus, Lidija Sekaric, Raman G. Viswanathan
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Patent number: 7544750Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.Type: GrantFiled: October 13, 2005Date of Patent: June 9, 2009Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, William H. Heath, Kaushal S. Patel, Pushkara R. Varanasi
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Publication number: 20090081418Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: ApplicationFiled: September 20, 2007Publication date: March 26, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Publication number: 20080286686Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.Type: ApplicationFiled: July 21, 2008Publication date: November 20, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi
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Patent number: 7435537Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.Type: GrantFiled: June 21, 2006Date of Patent: October 14, 2008Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Wenjie Li, Pushkara R. Varanasi
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Publication number: 20080213697Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: ApplicationFiled: April 18, 2008Publication date: September 4, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Patent number: 7407736Abstract: Methods for improving a single layer resist (SLR) patterning scheme, and in particular, its SLR layer and anti-reflective coating (ARC) etch selectivity, are disclosed. In one method, a patterned SLR layer over an anti-reflective coating (ARC) is provided and at least a portion of the patterned SLR layer and a portion of the ARC are exposed to radiation. The radiation may include, for example, an electron beam or an ion beam. The radiation exposure selectively breaks the polymer chains of the ARC and reduces the thickness of the ARC due to the loss of volatile function groups and free volume. As a result, the etch rate of the ARC is increased due to the conversion from polymer to monomer. Therefore, less resist will be consumed during, for example, an ARC open etch.Type: GrantFiled: January 31, 2006Date of Patent: August 5, 2008Assignee: International Business Machines CorporationInventors: Kuang-Jung J. Chen, Wu-Song S. Huang, Chung-Hsi J. Wu
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Patent number: 7399573Abstract: The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules.Type: GrantFiled: October 25, 2006Date of Patent: July 15, 2008Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Lidija Sekaric, James J. Bucchignano, David P. Klaus, Raman Viswanathan
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Patent number: 7375172Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: July 6, 2005Date of Patent: May 20, 2008Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Publication number: 20080102400Abstract: The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules.Type: ApplicationFiled: October 25, 2006Publication date: May 1, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song S. Huang, Lidija Sekaric, James J. Bucchignano, David P. Klaus, Raman Viswanathan