Patents by Inventor Wu-Tsung Lo
Wu-Tsung Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230395765Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: August 3, 2023Publication date: December 7, 2023Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20230317898Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Applicant: EPISTAR CORPORATIONInventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Patent number: 11757077Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: GrantFiled: May 3, 2021Date of Patent: September 12, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Patent number: 11705545Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: GrantFiled: May 3, 2021Date of Patent: July 18, 2023Assignee: EPISTAR CORPORATIONInventors: Hsin-Ying Wang, Chih-Hao Chen, Chien-Chih Liao, Chao-Hsing Chen, Wu-Tsung Lo, Tsun-Kai Ko, Chen Ou
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Publication number: 20210343913Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.Type: ApplicationFiled: May 3, 2021Publication date: November 4, 2021Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20210343906Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.Type: ApplicationFiled: May 3, 2021Publication date: November 4, 2021Inventors: Hsin-Ying WANG, Chih-Hao CHEN, Chien-Chih LIAO, Chao-Hsing CHEN, Wu-Tsung LO, Tsun-Kai KO, Chen OU
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Publication number: 20160056351Abstract: Disclosed is a light-emitting device. The light-emitting device comprises a light-emitting stack comprising an active layer; a substrate above the active layer, the substrate comprising a first surface and a second surface which is opposite to the first surface and is closer to the active layer than the first surface, wherein the substrate comprises a recess which is circumscribed by a part of the first surface; and a first electrode in the recess. A method for forming the light-emitting device is also disclosed.Type: ApplicationFiled: August 22, 2014Publication date: February 25, 2016Inventors: Yu Chih YANG, Wu Tsung LO
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Patent number: 9269863Abstract: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.Type: GrantFiled: January 28, 2014Date of Patent: February 23, 2016Assignee: Epistar CorporationInventors: Chien-Ming Wu, Wu-Tsung Lo, Shih-Chang Lee
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Patent number: 9269862Abstract: A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack.Type: GrantFiled: November 29, 2013Date of Patent: February 23, 2016Assignee: EPISTAR CORPORATIONInventors: Wu-Tsung Lo, Yu-Chih Yang, Chien-Ming Wu, Kai-Yi Hong
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Patent number: 9153944Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.Type: GrantFiled: February 5, 2014Date of Patent: October 6, 2015Assignee: EPISTAR CORPORATIONInventors: Shih-Chang Lee, Chih-Chiang Lu, Yi-Hung Lin, Wu-Tsung Lo, Ta-Chuan Kuo
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Patent number: 9136186Abstract: Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system.Type: GrantFiled: January 15, 2013Date of Patent: September 15, 2015Assignee: EPISTAR CORPORATIONInventors: Yu-Chih Yang, Wu-Tsung Lo
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Patent number: 9123634Abstract: Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed.Type: GrantFiled: January 10, 2014Date of Patent: September 1, 2015Assignee: EPISTAR CORPORATIONInventors: Yi Hung Lin, Yu Chih Yang, Wu Tsung Lo
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Publication number: 20150222094Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.Type: ApplicationFiled: February 5, 2014Publication date: August 6, 2015Applicant: Epistar CorporationInventors: Shih-Chang LEE, Chih-Chiang LU, Yi-Hung LIN, Wu-Tsung LO, Ta-Chuan KUO
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Publication number: 20150155433Abstract: A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack.Type: ApplicationFiled: November 29, 2013Publication date: June 4, 2015Applicant: EPISTAR CORPORATIONInventors: Wu-Tsung Lo, Yu-Chih Yang, Chien-Ming Wu, Kai-Yi Hong
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Patent number: 8889436Abstract: A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately.Type: GrantFiled: April 25, 2012Date of Patent: November 18, 2014Assignee: Epistar CorporationInventors: Wu-Tsung Lo, Yu-Chih Yang, Rong-Ren Lee
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Patent number: 8884157Abstract: A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first metal contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first metal contact layer and the optoelectronic structure; removing the dielectric layer on the first metal contact layer; and forming an electrode structure on the first metal contact layer.Type: GrantFiled: May 11, 2012Date of Patent: November 11, 2014Assignee: Epistar CorporationInventors: Yi-Hung Lin, Yu-Chih Yang, Wu-Tsung Lo
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Publication number: 20140217359Abstract: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.Type: ApplicationFiled: January 28, 2014Publication date: August 7, 2014Applicant: EPISTAR CORPORATIONInventors: Chien-Ming WU, Wu-Tsung LO, Shih-Chang LEE
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Publication number: 20140199784Abstract: Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system.Type: ApplicationFiled: January 15, 2013Publication date: July 17, 2014Applicant: EPISTAR CORPORATIONInventors: Yu-Chih Yang, Wu-Tsung Lo
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Publication number: 20140196782Abstract: Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed.Type: ApplicationFiled: January 10, 2014Publication date: July 17, 2014Applicant: EPISTAR CORPORATIONInventors: Yi Hung LIN, Yu Chih YANG, Wu Tsung LO
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Patent number: 8755665Abstract: An electromagnetic wave gathering device includes a pillared electromagnetic waveguide body and a reflective structure. The reflective structure is located at about an axis of the pillared electromagnetic waveguide body. The reflective structure comprises a plurality of bicone reflective units. Each of the reflective units has a first reflective surface. The electromagnetic wave gathering device may have a smaller volume and is handy for use.Type: GrantFiled: June 29, 2011Date of Patent: June 17, 2014Assignee: Epistar CorporationInventors: Kai-Yi Hong, Wu-Tsung Lo, Shih-Chang Lee