Patents by Inventor Wu Xiang Li

Wu Xiang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabricating the same
    Patent number: 12213303
    Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, and which includes a substrate, bit lines, bit line contacts, a gate structure, a first oxidized interface layer, and a second oxidized interface layer. The bit lines are disposed on the substrate, and the bit line contacts are disposed below the bit lines. The gate structure is disposed on the substrate, wherein each bit line and the gate structure respectively include a semiconductor layer, a conductive layer, and a covering layer stacked from bottom to top. The first oxidized interface layer is disposed between each bit line contact and the semiconductor layer of each bit line. The second oxidized interface layer is disposed within the semiconductor layer of the gate structure, wherein a topmost surface of the first oxidized interface layer is higher than a topmost surface of the second oxidized interface layer.
    Type: Grant
    Filed: April 21, 2022
    Date of Patent: January 28, 2025
    Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Yukihiro Nagai, Lu-Yung Lin, Chia-Wei Wu, Tsun-Min Cheng, Yu Chun Lin, Zheng Guo Zhang, Sun-Hung Chen, Wu Xiang Li, Hsiao-Han Lin
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20230284436
    Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, and which includes a substrate, bit lines, bit line contacts, a gate structure, a first oxidized interface layer, and a second oxidized interface layer. The bit lines are disposed on the substrate, and the bit line contacts are disposed below the bit lines. The gate structure is disposed on the substrate, wherein each bit line and the gate structure respectively include a semiconductor layer, a conductive layer, and a covering layer stacked from bottom to top. The first oxidized interface layer is disposed between each bit line contact and the semiconductor layer of each bit line. The second oxidized interface layer is disposed within the semiconductor layer of the gate structure, wherein a topmost surface of the first oxidized interface layer is higher than a topmost surface of the second oxidized interface layer.
    Type: Application
    Filed: April 21, 2022
    Publication date: September 7, 2023
    Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Yukihiro Nagai, Lu-Yung Lin, Chia-Wei Wu, Tsun-Min Cheng, Yu Chun Lin, Zheng Guo Zhang, Sun-Hung Chen, Wu Xiang Li, Hsiao-Han Lin