Patents by Inventor WUFENG DENG

WUFENG DENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9950405
    Abstract: A chemical mechanical planarization (CMP) apparatus is provided. The CMP apparatus includes at least one platen; and a polishing pad disposed on the platen. The CMP apparatus also includes a polishing head disposed above the platen and configured to clamp a to-be-polished wafer; and a basic solution supply port disposed above the platen and configured to supply a basic solution onto a surface of the polishing pad. Further, the CMP apparatus includes a slurry arm disposed above the platen and configured to supply a polish slurry on the surface of the polishing pad; and a deionized water supply port configured to supply deionized water onto the surface of the polishing pad. Further, the CMP apparatus also includes a negative power source configured to apply a negative voltage onto the surface of the polishing pad.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: April 24, 2018
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Wufeng Deng
  • Publication number: 20150183081
    Abstract: A chemical mechanical planarization (CMP) apparatus is provided. The CMP apparatus includes at least one platen; and a polishing pad disposed on the platen. The CMP apparatus also includes a polishing head disposed above the platen and configured to clamp a to-be-polished wafer; and a basic solution supply port disposed above the platen and configured to supply a basic solution onto a surface of the polishing pad. Further, the CMP apparatus includes a slurry arm disposed above the platen and configured to supply a polish slurry on the surface of the polishing pad; and a deionized water supply port configured to supply deionized water onto the surface of the polishing pad. Further, the CMP apparatus also includes a negative power source configured to apply a negative voltage onto the surface of the polishing pad.
    Type: Application
    Filed: July 29, 2014
    Publication date: July 2, 2015
    Inventor: WUFENG DENG
  • Patent number: 8455362
    Abstract: A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.
    Type: Grant
    Filed: October 5, 2011
    Date of Patent: June 4, 2013
    Assignee: Semiconductor Manufacturing International Corp.
    Inventors: Feng Zhao, Wufeng Deng, Jingmin Zhao, Feng Chen, Chunliang Liu
  • Publication number: 20120244706
    Abstract: A chemical mechanical polishing method includes providing a device layer having a surface to be polished, polishing the surface using an alkaline grinding slurry, removing a residual layer that is been formed on the polished surface using an acid buffer, forming a passivation layer covering the polished surface of the device layer after the residual layer has been removed, and cleaning the passivation layer using deionized water. A semiconductor device thus fabricated has surfaces with excellent flatness, good manufacturing yield and long-term reliability.
    Type: Application
    Filed: October 5, 2011
    Publication date: September 27, 2012
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Feng ZHAO, Wufeng DENG, Jingmin ZHAO, Feng CHEN, Chunliang LIU
  • Publication number: 20120196442
    Abstract: A chemical mechanical polishing method includes providing a semiconductor substrate having a dielectric layer formed thereon, wherein the dielectric layer includes vias and/or grooves, forming a stop layer on the dielectric layer and on sidewalls and bottoms of the vias and/or grooves; forming a metal layer on the stop layer, which completely fills the vias and/or grooves. The method further includes grinding the metal layer until the stop layer is exposed, removing a portion of the stop layer with a first grinding slurry, and removing the stop layer left over with a second grinding slurry until the dielectric layer is exposed, wherein a quantity and a diameter of oxide grinding particles in the second grinding slurry are smaller than those in the first grinding slurry. The method guarantees a removal rate that is equal to conventional art and prevents damage to the wafer so that the products thus made have an improved quality and performance.
    Type: Application
    Filed: September 23, 2011
    Publication date: August 2, 2012
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: WUFENG DENG
  • Publication number: 20120196443
    Abstract: A Chemical Mechanical Polishing (CMP) method includes providing a semiconductor substrate having an overlying dielectric layer, performing a first grinding on the dielectric layer, wherein the first grinding produces organic residues on a surface of the dielectric layer after the first grinding. The method further includes performing a second grinding on the dielectric layer by using an alkaline solution to remove the organic residues on the surface of the dielectric layer. The organic residues remaining on the surface of the dielectric layer are removed by using the alkaline solution after the first grinding process is performed. The method additionally includes cleaning a grinding pad and the substrate using deionized water.
    Type: Application
    Filed: October 12, 2011
    Publication date: August 2, 2012
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: WUFENG DENG