Patents by Inventor Wuhao GAO

Wuhao GAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220384424
    Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.
    Type: Application
    Filed: December 22, 2021
    Publication date: December 1, 2022
    Inventors: Qiyue ZHAO, Chunhua ZHOU, Maolin LI, Wuhao GAO, Chao YANG, Guanshen YANG, Shaopeng CHENG
  • Publication number: 20220385203
    Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.
    Type: Application
    Filed: December 22, 2021
    Publication date: December 1, 2022
    Inventors: Qiyue ZHAO, Chunhua ZHOU, Maolin LI, Wuhao GAO, Chao YANG, Guanshen YANG, Shaopeng CHENG
  • Publication number: 20220384628
    Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.
    Type: Application
    Filed: January 27, 2021
    Publication date: December 1, 2022
    Inventors: Jingyu SHEN, Qiyue ZHAO, Chunhua ZHOU, Chao YANG, Wuhao GAO, Yu SHI, Baoli WEI
  • Publication number: 20220384423
    Abstract: The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate potential management circuit configured for managing a potential of the main substrate. By implementing the substrate potential management circuit, the substrate potential can be stabilized to a lower one of the potentials of the first source/drain and the second source/drain of the bilateral transistor no matter in which directions the bidirectional switching device is operated. Therefore, the bilateral transistor can be operated with a stable substrate potential for conducting current in both directions.
    Type: Application
    Filed: December 22, 2021
    Publication date: December 1, 2022
    Inventors: Qiyue ZHAO, Chunhua ZHOU, Maolin LI, Wuhao GAO, Chao YANG, Guanshen YANG, Shaopeng CHENG
  • Publication number: 20220376061
    Abstract: A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passivation layer. The first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate. The second passivation layer covers the first field plate. The second field plate is disposed over the second passivation layer. The second passivation has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate. A thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.
    Type: Application
    Filed: February 19, 2021
    Publication date: November 24, 2022
    Inventors: Qiyue ZHAO, Wuhao GAO, Fengming LIN
  • Publication number: 20220005806
    Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer, a first gate, a second gate, and a first passivation layer. The first gate and the second gate are on the III-V material layer. The first passivation layer is on the first gate. A first activation ratio of an element in the first gate is different from a second activation ratio of the element in the second gate.
    Type: Application
    Filed: July 3, 2020
    Publication date: January 6, 2022
    Inventors: Qiyue ZHAO, Wuhao GAO, Zu Er CHEN