Patents by Inventor WUJIA CHEN

WUJIA CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE INCLUDING SHALLOW TRENCH ISOLATION STRUCTURES
    Publication number: 20170140998
    Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.
    Type: Application
    Filed: December 19, 2016
    Publication date: May 18, 2017
    Inventors: KUAN XU, WUJIA CHEN
  • Method of forming shallow trench isolations for a semiconductor device
    Patent number: 9559017
    Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: January 31, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Kuan Xu, Wujia Chen
  • SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF
    Publication number: 20160064290
    Abstract: A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.
    Type: Application
    Filed: August 6, 2015
    Publication date: March 3, 2016
    Inventors: KUAN XU, WUJIA CHEN