Patents by Inventor Wujie Wen

Wujie Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
    Patent number: 9627024
    Abstract: A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: April 18, 2017
    Assignee: University of Pittsburgh—Of the Commonwealth System of Higher Education
    Inventors: Yiran Chen, Enes Eken, Hai Li, Wujie Wen, Xiuyuan Bi
  • MAGNETIC-ASSISTED NONDESTRUCTIVE SELF-REFERENCE SENSING METHOD FOR SPIN-TRANSFER TORQUE RANDOM ACCESS MEMORY
    Publication number: 20160225427
    Abstract: A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage.
    Type: Application
    Filed: September 16, 2014
    Publication date: August 4, 2016
    Applicant: UNIVERSITY OF PITTSBURGH-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: Yiran Chen, Enes Eken, Hai Li, Wujie Wen, Xiuyuan Bi