Abstract: The present invention discloses a lateral-optical-mode-controlled high-power semiconductor device, a manufacturing method thereof and a semiconductor packaging structure. The lateral-optical-mode-controlled high-power semiconductor device comprises a semiconductor substrate layer; an active layer arranged upon the semiconductor substrate layer; a front electrode layer arranged on a side of the active layer away from the semiconductor substrate layer, the front electrode layer including an electrode injection region; wherein thickness of the electrode injection region decreases progressively from a central part of the electrode injection region to an edge part of the electrode injection region along a slow axis direction of the lateral-optical-mode-controlled high-power semiconductor device. The semiconductor device has high light-output brightness, high beam quality, as well as low cost and high degree of integration.