Patents by Inventor Wun-Jie Hung Lin

Wun-Jie Hung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor arrangement facilitating enhanced thermo-conduction
    Patent number: 9230961
    Abstract: A semiconductor arrangement includes a well region and a first region disposed within the well region. The first region includes a first conductivity type. The semiconductor arrangement includes a first gate disposed above the well region on a first side of the first region. The first gate includes a first top surface facing away from the well region. The first top surface has a first top surface area. The semiconductor arrangement includes a first gate contact disposed above the first gate. The first gate contact includes a first bottom surface facing towards the well region. The first bottom surface has a first bottom surface area. The first bottom surface area covers at least about two thirds of the first top surface area.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: January 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ming-Hsiang Song, Jam-Wem Lee, Yi-Feng Chang, Wun-Jie Hung Lin
  • SEMICONDUCTOR ARRANGEMENT FACILITATING ENHANCED THERMO-CONDUCTION
    Publication number: 20150129971
    Abstract: A semiconductor arrangement includes a well region and a first region disposed within the well region. The first region includes a first conductivity type. The semiconductor arrangement includes a first gate disposed above the well region on a first side of the first region. The first gate includes a first top surface facing away from the well region. The first top surface has a first top surface area. The semiconductor arrangement includes a first gate contact disposed above the first gate. The first gate contact includes a first bottom surface facing towards the well region. The first bottom surface has a first bottom surface area. The first bottom surface area covers at least about two thirds of the first top surface area.
    Type: Application
    Filed: November 14, 2013
    Publication date: May 14, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ming-Hsiang Song, Jam-Wem Lee, Yi-Feng Chang, Wun-Jie Hung Lin