Patents by Inventor Wu-Zhang Yang

Wu-Zhang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching narrow, tall dielectric isolation structures from a dielectric layer
    Patent number: 8729655
    Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: May 20, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Ying Liu, Keh-Chiang Ku, Wu-Zhang Yang
  • ETCHING NARROW, TALL DIELECTRIC ISOLATION STRUCTURES FROM A DIELECTRIC LAYER
    Publication number: 20140035087
    Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.
    Type: Application
    Filed: August 2, 2012
    Publication date: February 6, 2014
    Inventors: Chia-Ying Liu, Keh-Chiang Ku, Wu-Zhang Yang
  • Etching narrow, tall dielectric isolation structures from a dielectric layer
    Patent number: 8338263
    Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: December 25, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Ying Liu, Keh-Chiang Ku, Wu-Zhang Yang
  • ETCHING NARROW, TALL DIELECTRIC ISOLATION STRUCTURES FROM A DIELECTRIC LAYER
    Publication number: 20120319230
    Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.
    Type: Application
    Filed: June 20, 2011
    Publication date: December 20, 2012
    Inventors: Chia-Ying Liu, Keh-Chiang Ku, Wu-Zhang Yang