Abstract: A method of manufacturing an offset MRAM device (110), including utilizing two resist layers either to pattern a magnetic stack layer to form offset conductive lines (158) and magnetic memory cells (160), or to pattern an insulating layer to form vias (168) to expose magnetic memory cells and trenches (170) for conductive lines, or both, using a single etch process.

Abstract: A light absorption layer deposited onto a dielectric layer having an interconnect positioned below converts light into heat during laser deleting of the interconnect. This approach allows for minimum reflectance of the laser when contacting the light absorption layer with the light from the laser thereby melting the interconnect more efficiently. The light absorption layer also functions as (1) a buried anti-reflective layer for via opening lithography which connects the interconnect and a metal level position above and (2) an etch stopper when forming a fuse opening by RIE.