Abstract: A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.

Abstract: A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.

Abstract: An electronic component includes at least one semiconductor device and a redistribution board comprising at least two nonconductive layers and a conductive redistribution structure. The semiconductor device is embedded in the redistribution board and electrically coupled to the redistribution structure and the redistribution board has a side face with a step. An outer contact pad of the redistribution structure is arranged on the step.

Abstract: A semiconductor packaging arrangement includes a transistor device including a first side including a source electrode and a gate electrode, a die pad having a first surface, and a lead having a first surface. A first conductive member is arranged between the source electrode and the first surface of the die pad and spaces the source electrode from the first surface of the die pad by a distance that is greater than a distance between the gate electrode and the first surface of the lead.

Abstract: A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.

Abstract: A semiconductor packaging arrangement includes a transistor device including a first side including a source electrode and a gate electrode, a die pad having a first surface, and a lead having a first surface. A first conductive member is arranged between the source electrode and the first surface of the die pad and spaces the source electrode from the first surface of the die pad by a distance that is greater than a distance between the gate electrode and the first surface of the lead.

Abstract: An electronic component includes at least one semiconductor device and a redistribution board comprising at least two nonconductive layers and a conductive redistribution structure. The semiconductor device is embedded in the redistribution board and electrically coupled to the redistribution structure and the redistribution board has a side face with a step. An outer contact pad of the redistribution structure is arranged on the step.

Abstract: An electronic component has a housing and at least two terminal pins protruding out from a first side face of the housing. The housing has an isolation barrier formed between the at least two terminal pins. The isolation barrier extends the leakage path between two neighboring terminal pins and consequently increases the dielectric strength.

Abstract: An electronic component has a housing and at least two terminal pins protruding out from a first side face of the housing. The housing has an isolation barrier formed between the at least two terminal pins. The isolation barrier extends the leakage path between two neighboring terminal pins and consequently increases the dielectric strength.

Abstract: The invention relates to a two-chip power IC, in which a sensor chip having a sensor is mounted on a switch chip having a switch. The sensor is electrically connected to the switch in order to turn the switch off when a temperature detected by the sensor exceeds a threshold value which can be preset. In order to ensure that the sensor chip is heated more quickly, at least one supply line for the switch is routed in the vicinity of the sensor so as to assure good heat transfer from the supply line to the sensor.

Abstract: A bearer strip having components arranged in several parallel rows with variable spacing between the rows so as to increase packing density while providing sufficient empty space for introducing free flowing plastic on the bearer strip.