Abstract: An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

Abstract: A method of forming nanowires, including the forming on a metal region of a layer having through openings, and the forming in the through openings of portions deposited in a chemical bath, forming all or part of the nanowires and extending from the metal region.

Abstract: A flexible electronic structure includes a first film, made of a first polymer or glass, and a second film, made of a second polymer, in which at least one electronic component is arranged. The second film covers the first film. The flexible electronic structure also includes at least one electrically conductive track arranged between the first film and the second film, and each electrically connected to one of the electronic components, by a respective interconnection element. Optionally, the flexible electronic structure includes a third film, made of a third polymer or glass, covering the second film. The interconnection element is arranged near the neutral plane of the structure, and the structure includes at least one compensation layer, so as to position the neutral plane at a desired location.

Abstract: A nanowire forming method, including the forming of a DNA origami having through openings, and the forming in the through openings of portions forming all or part of the nanowires.

Abstract: The piezoelectric device includes a first electrode, a second electrode, piezoelectric elongate nano-objects in contact with the first electrode, and extending between the first electrode and the second electrode, a first layer of an electrically-insulating first material, the first layer surrounding a first longitudinal portion of each of the piezoelectric elongate nano-objects, a second layer of an electrically-insulating second material, the second layer surrounding a second longitudinal portion of each of the piezoelectric elongate nano-objects. The first layer is arranged between the first electrode and the second layer. The thickness of the first layer is strictly smaller than the thickness of the second layer. The first material has a Young's modulus strictly higher than the Young's modulus of the second material.

Abstract: A flexible electronic structure includes a first film, made of a first polymer or glass, and a second film, made of a second polymer, in which at least one electronic component is arranged. The second film covers the first film. The flexible electronic structure also includes at least one electrically conductive track arranged between the first film and the second film, and each electrically connected to one of the electronic components, by a respective interconnection element. Optionally, the flexible electronic structure includes a third film, made of a third polymer or glass, covering the second film. The interconnection element is arranged near the neutral plane of the structure, and the structure includes at least one compensation layer, so as to position the neutral plane at a desired location.

Abstract: This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LixPyOzNw, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: A device used for cooling a component including a support to receive a component to be cooled, is provided. The support includes a fluid network in which a liquid will circulate. The network includes a first cavity, a second cavity, and a first channel connecting the first cavity to the second cavity, a first deformable membrane and a second deformable membrane forming a mobile wall of the first cavity and a mobile wall of the second cavity respectively. The device further an actuation device for actuating the first membrane and the second membrane, the actuating device including a fixed electrode located on one or several protuberances of the support.

Abstract: There is provided a device for cooling a component, including a support configured to receive a component to be cooled, the support including a fluid network configured for liquid circulation therein, the network including a first cavity, a second cavity, and a first channel connecting the first cavity to the second cavity, a first deformable membrane and a second deformable membrane configured to form a mobile wall of the first cavity and a mobile wall of the second cavity respectively, the device further including an actuating device configured to actuate the first membrane and the second membrane, and a thermal conducting element close to the channel or in contact with the channel.

Abstract: This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LixPyOzNw, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Abstract: A getter structure is provided, including a support; a first layer of getter material disposed on the support a second layer of getter material, the first layer of getter material being disposed between the support and the second layer of getter material; a first portion of material mechanically connecting a first face of the second layer of getter material to a first face of the first layer of getter material and forming at least one first space between the first faces of the first and second layers of getter material configured to allow a circulation of gas between the first faces of the first and second layers of getter material; and a first opening crossing through at least the second layer of getter material and emerging into the first space.

Abstract: Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8a, 8b) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support (44) to connect a nano-object (50) onto its top face and continue the electrical contact on its bottom face. At least two interconnects (52, 54) pass through the support. The two faces of the support comprise contact continuity zones (56, 58, 60, 62) for the interconnects. According to the invention, at least the zones (56, 58) in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Abstract: Method for encapsulating a microelectronic device, comprising the following steps: producing a sacrificial portion covering the device; producing a cover covering the sacrificial portion, comprising two superimposed layers of separate materials and having different residual stresses and/or coefficients of thermal expansion; etching, through the cover, of a trench of which the pattern comprises a curve and/or two straight non-parallel segments; etching of the sacrificial portion through the trench; depositing a sealing material on the trench; in which, during the etching of the sacrificial portion, a portion of the cover defined by the trench deforms under the effect of a mechanical stress generated by the residual stresses and/or a thermal expansion of the layers of the cover and increases the dimensions of the trench, this stress being eliminated before the sealing of the trench.

Abstract: Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer (4) in which the first doped zones (8a, 8b) are formed at a spacing from each other, an external electrical system (SEE) being connectable to the first doped zones, each first doped zone (8a, 8b) being in contact with a second doped zone (12a, 12b) on which a portion of the nano-object is located, the second doped zones (12a, 12b) being separated from each other and with a thickness (e2) less than the thickness (e1) of the first doped zones (FIG. 1).

Abstract: Method for encapsulating a microelectronic device, comprising the following steps: producing a sacrificial portion covering the device; producing a cover covering the sacrificial portion, comprising two superimposed layers of separate materials and having different residual stresses and/or coefficients of thermal expansion; etching, through the cover, of a trench of which the pattern comprises a curve and/or two straight non-parallel segments; etching of the sacrificial portion through the trench; depositing a sealing material on the trench; in which, during the etching of the sacrificial portion, a portion of the cover defined by the trench deforms under the effect of a mechanical stress generated by the residual stresses and/or a thermal expansion of the layers of the cover and increases the dimensions of the trench, this stress being eliminated before the sealing of the trench.

Abstract: This invention relates to a microelectronic device comprising: a first support (1), a second support (2), first respective faces of the first support and second support (1, 2) being arranged opposite, and a sealing layer (4) between said first faces, characterized in that the sealing layer (4) comprises at least one layer of an ionic conductive material of formula LixPyOzNw, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Abstract: A packaging structure including: a cover secured to a first substrate and forming first and second distinct cavities between the cover and the first substrate, first and second channels formed in the first substrate and/or in the cover and/or between the first substrate and the cover, the first channel including a first end leading into the first cavity and a second end leading off the first cavity via a first hole passing through the cover, the second channel including a first end leading into the second cavity and a second end leading off the second cavity via a second hole passing through the cover, a height HA of the first channel at its second end is lower than a height HB of the second channel at its second end.