Patents by Inventor Xavier BLOT

Xavier BLOT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for direct bonding of III-V semiconductor substrates with a radical oxide layer
    Patent number: 10586783
    Abstract: A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: March 10, 2020
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, SOITEC
    Inventors: Hubert Moriceau, Bruno Imbert, Xavier Blot
  • Method for assembling substrates by bonding indium phosphate surfaces
    Patent number: 10283364
    Abstract: The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10?4 Pa, and preferably higher than 10?3 Pa, e) subjecting the assembly formed in step d) to heat treatment.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: May 7, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Bruno Imbert, Hubert Moriceau, Xavier Blot
  • METHOD FOR ASSEMBLING SUBSTRATES BY BONDING INDIUM PHOSPHATE SURFACES
    Publication number: 20180330950
    Abstract: The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10?4 Pa, and preferably higher than 10?3 Pa, e) subjecting the assembly formed in step d) to heat treatment.
    Type: Application
    Filed: November 7, 2016
    Publication date: November 15, 2018
    Applicants: COMMISSARIA A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Bruno IMBERT, Hubert MORICEAU, Xavier BLOT
  • METHOD FOR MANUFACTURING SUBSTRATES
    Publication number: 20170133347
    Abstract: A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.
    Type: Application
    Filed: November 1, 2016
    Publication date: May 11, 2017
    Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, SOITEC
    Inventors: Hubert MORICEAU, Bruno IMBERT, Xavier BLOT