Abstract: An amplifier assembly includes a three or more way Doherty amplifier arrangement (DAA) having at least three amplifiers, including a main amplifier and at least two peak amplifiers. The DAA is within a dual-path package including a first-RF-input-lead and a second-RF-input-lead for receiving components of a split RF-input signal and providing the components to the DAA. A first-RF-output-lead and a second-RF-output-lead receive a split output signal from the DAA. The DAA includes a first-semiconductor-die and a second-semiconductor-die, each having thereon respective amplifier(s). The first-semiconductor-die includes a Doherty-splitter element splitting the RF-input signal from the first-RF-input-lead to provide an input to two amplifiers thereon and a Doherty-combiner element to combine an output from the two amplifiers. The Doherty-combiner element is connected to the first-RF-output-lead.

Abstract: Embodiments described herein relate to a Doherty amplifier. The Doherty amplifier may include a main amplifier and a first peak amplifier, a second peak amplifier, and a third peak amplifier, each amplifier having an input and an output. The Doherty amplifier may also include a combining network configured for combining signals emerging at outputs of the amplifiers. The signals are combined at a combining node. The combining network includes a first impedance inverter arranged in between the output of the main amplifier and the output of the third peak amplifier. The combining network also includes a second impedance inverter arranged in between the output of the first peak amplifier and the output of the second peak amplifier. The combining network also includes a first 180 degrees phase shifter and a second 180 degrees phase shifter. Additionally, the combining network includes a third impedance inverter.

Abstract: Embodiments described herein relate to a Doherty amplifier. The Doherty amplifier may include a main amplifier and a first peak amplifier, a second peak amplifier, and a third peak amplifier, each amplifier having an input and an output. The Doherty amplifier may also include a combining network configured for combining signals emerging at outputs of the amplifiers. The signals are combined at a combining node. The combining network includes a first impedance inverter arranged in between the output of the main amplifier and the output of the third peak amplifier. The combining network also includes a second impedance inverter arranged in between the output of the first peak amplifier and the output of the second peak amplifier. The combining network also includes a first 180 degrees phase shifter and a second 180 degrees phase shifter. Additionally, the combining network includes a third impedance inverter.

Abstract: An amplifier assembly includes a three or more way Doherty amplifier arrangement (DAA) having at least three amplifiers, including a main amplifier and at least two peak amplifiers. The DAA is within a dual-path package including a first-RF-input-lead and a second-RF-input-lead for receiving components of a split RF-input signal and providing the components to the DAA. A first-RF-output-lead and a second-RF-output-lead receive a split output signal from the DAA. The DAA includes a first-semiconductor-die and a second-semiconductor-die, each having thereon respective amplifier(s). The first-semiconductor-die includes a Doherty-splitter element splitting the RF-input signal from the first-RF-input-lead to provide an input to two amplifiers thereon and a Doherty-combiner element to combine an output from the two amplifiers. The Doherty-combiner element is connected to the first-RF-output-lead.